7 Papers
16 Citations
S. Lee is an academic researcher from University of Colorado Colorado Springs. The author has contributed to research in topics: Oxide & Transmission electron microscopy. The author has an hindex of 2, co-authored 7 publications.
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Papers
In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon Bilayers
Z. Ma,Leslie H. Allen,S. Lee +2 more
TL;DR: The formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffraction, cross-sectional transmission electron microscopy and Auger electron spectroscopy.
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Reaction Kinetics of Sputter-Deposited Ti on SiO2 Substrates During Rapid Thermal Annealing
TL;DR: In this paper, the interactions of sputterdeposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C − 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction and cross-sectional TEM.
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Optimization of a TiN/TiSi2 p+ Diffusion Barrier Process
TL;DR: In this paper, the authors compared the effects of a two-step versus one-step rapid thermal anneal on control of the TiN/TiSi2 thickness ratio. And they used the RS/Discover software package to identify a metallization process that minimized p+ resistance as well as maximized barrier capability.
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Short-channel MOSFETs with oxynitride gate dielectrics fabricated using multiple rapid thermal processing
D.K. Shih,Dim-Lee Kwong,S. Lee +2 more
TL;DR: In this article, the gate dielectrics are produced by rapid thermal nitridation (RTN) of thin thermal oxides in pure NH3 ambient followed by Rapid thermal reoxidation (RTO) in O2 ambient.
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Rapid Thermal Nitridation of Thin Oxides
TL;DR: In this article, the kinetics of initial nitridation of thermal oxides is studied by using rapid thermal nitrification of thin oxides, and the amount of nitrogen incorporated in and the oxygen escaped from 100A oxides has been characterized quantitatively as a function of RTN conditions.
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