A commercial patient dose verification system utilizing non-invasive metal oxide semiconductor field effect transistor (MOSFET) dosimeters originally designed for radiotherapy applications has been evaluated for use at diagnostic energy levels. The system features multiple dosimeters that ma

The Characterization of a Commercial Mosfet Dosimeter System for Use in Diagnostic X-Ray

Digital images or the charge from pixels in light sensitive semiconductor based imagers may be used to detect gamma rays and energetic particles emitted by radioactive materials. Methods may be used to identify pixel-scale artifacts introduced into digital images and video images by high energy gamma rays. Statistical tests and other comparisons on the artifacts in the images or pixels may be used to prevent false-positive detection of gamma rays. The sensitivity of the system may be used to detect radiological material at distances in excess of 50 meters. Advanced processing techniques allow for gradient searches to more accurately determine the source's location, while other acts may be used to identify the specific isotope. Coordination of different imagers and network alerts permit the system to separate non-radioactive objects from radioactive objects.

Apparatus and method for detection of radiation

Radiation tolerance of components and materials in nuclear robot applications

This work proposes a new biasing technique to extend the dose measurement range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining an uniform sensitivity along the whole measurement. The technique was applied with 70 nm MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses.

Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

This paper investigates the use of switching converters for the power supply distribution to calorimeters in the ATLAS experiment when the Large Hadron Collider (LHC) will be upgraded beyond the nominal luminosity. Due to the highly hostile environment the converters must operate in, all the main aspects are considered in the investigation, from the selection of the switching converter topologies to the thermal analysis of components and PCBs, with attention to reliability issues of power devices subject to ionizing radiations. The analysis focuses on the particular, but crucial, case of the power supplies for calorimeters, though several outcomes of the research can profitably be applied to other detectors like muon chambers.

https://iopscience.iop.org/article/10.1088/1748-0221/6/06/P06005/pdf

Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity

The response of MOS dosimeters manufactured by REM and NMRC has been assessed at total doses of up to 1 MGy for use in nuclear power industry applications. This has shown that existing devices can be used for some tasks but further development and qualification is required for others.

The use of pMOS dosimeters at megagray total doses

Twelve types of CCTV camera have been radiation tested using a standard test procedure. The results of these tests are presented as a guide to the generic radiation tolerance of such cameras.

Radiation tolerance of current CCD-based CCTV cameras

P- and n-channel, medium power MOSFETs have been radiation tested at three widely differing dose rates in order to improve our understanding of the reliability of accelerated testing for these devices. Recent data have indicated that the very low dose rates found in space can lead to more damage than is observed at higher dose rates. The results of the current work show that no difference is observed between the effects caused by the dose rates used here for these devices.

The influence of dose rate on total dose radiation effects on MOSFETs

This paper describes a comparison of the effects of gamma radiation from spent nuclear fuel elements and cobalt-60 isotope sources on electronic components. The types of component assessed, details of the radiation testing and the results obtained are covered in depth. The conclusion is reached that the magnitude of any discrepancies observed in the type or degree of radiation effect is small when compared with the batch-to-batch variation between components and the differences resulting from temperature changes. >

A comparison of the effects of gamma radiation from spent fuel and cobalt-60 on electronic components

Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.

Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages

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