By a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses.

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated devices. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current flow. In this paper we give a review of development of trench gate IGBTs and we describe briefly new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.

Silicon MOS controlled bipolar power switching devices using trench technology

The IGBT3 technology, which combines a specific trench cell and the field stop concept, was first introduced for devices with 1200 V blocking voltage. It is now transferred to higher blocking voltage ratings. A new series of 1700 V devices is introduced, which compared with conventional NPT (= non punch through) devices has greatly reduced static and dynamic losses and preserves the well known ruggedness of NPT devices. With this new 1700 V chip generation a new product line of modules with up to 50% higher current capability in the same housing is available.

1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction

This paper presents the design of IGBT-based switching modules for pulsed power applications. Starting from theoretical and practical aspects for the selection of the IGBTs the required parameters for the design of a single cell are derived. Extended results of the characterization process for different IGBTs are presented. They show that by using a special gate driving method for IGBT devices it is possible to realize the required maximum values of peak current and current slope. From the design of the single cell the conditions for a multiple cell series connection for the target application follow. This includes the development of a high-speed gate drive based on a pulse transformer. The designed cascade is used in a nitrogen gas laser and switches a voltage of 12 kV and carries a peak current of 500A at a maximum current slope of about 28Ans -1 .

Design of high-speed igbt-based switching modules for pulsed power applications

This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications. Technological issues such as the trench profile, the gate oxide quality, the trench inversion layer mobility and lay-out design are discussed. Optimization of 1.8 kV Trench IGBTs using extensive numerical simulations and physical analysis is carried out. New termination techniques are proposed.

Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

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Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology