Sandia National Laboratories is the nation's premier science and engineering lab for national security and technology innovation. We are a world‐class team of scientists, engineers, technologists, postdocs, and visiting researchers all focused on cutting‐edge technology, ranging from homeland defense, global security, biotechnology, and environmental preservation to energy and combustion research, computer security, and nuclear defense.

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There are numerous methods for measuring the temperature of an operating semiconductor device. The methods can be broadly placed into three generic categories: electrical, optical, and physically contacting. The fundamentals underlying each of the categories are discussed, and a review of the variety of techniques within each category is given. Some of the advantages and disadvantages as well as the spatial, time, and temperature resolution are also provided.

Temperature measurements of semiconductor devices - a review

We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of ~10 and ~140 mus for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

The performance and reliability of microdevices can be strongly influenced by the peak temperature rise and spatial temperature distribution during brief electrical overstress (EOS) phenomena, which can occur at sub-microsecond time scales. The present study investigates short-time-scale laser reflectance thermometry of micro devices by examining the impact of passivation overlayers on the thermoreflectance signal and by demonstrating a calibration method suitable for metallization. This manuscript also describes a scanning laser thermometry facility that captures temperature fields in microdevices with 10 ns temporal resolution and 1 μm spatial resolution. The facility combines scanning laser optics with electrical stressing capability to allow simultaneous interrogation of the thermal and electrical behavior of devices. Data show the transient temperature distribution along the drift region of silicon-on-insulator (SOI) power transistors and along metal interconnects subjected to brief electrical stresses. The theory and experimental capability developed in this study are useful for studying short-time-scale thermal phenomena in microdevices and verifying models employed for their simulation.

Short-time-scale thermal mapping of microdevices using a scanning thermoreflectance technique

Sub-micrometer thermal physics : An overview on SThM techniques

We report spatial mapping of temperature fields in semiconductor devices with sub-microsecond temporal resolution. The measurements are performed at a facility that integrates scanning laser-reflectance thermometry with electrical stressing capability. Data for SOI LDMOS transistors investigate transient heat diffusion within the buried silicon dioxide and capture large temperature gradients in the drift region, which result from the spatially-varying impurity concentration. The new thermometry facility is promising for the study of transistor and interconnect thermal failure due to electrostatic discharge (ESD).

Short-timescale thermal mapping of semiconductor devices

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Short-timescale thermal mapping of semiconductor devices