Among several major challenges posed by generating and accelerating adequate intensities of RIBs, selection of the most appropriate target material is perhaps the most difficult because of the requisite fast and selective thermal release of minute amounts of the short-lived product atoms from the ISOL target in the presence of bulk amounts of target material. Experimental studies are under way at the Oak Ridge National Laboratory (ORNL) which are designed to measure the time evolution of implanted elements diffused from refractory target materials which are candidates for forming radioactive ion beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF). The diffusion coefficients are derived by comparing experimental data with numerical solutions to a one-dimensional form of Fick`s second law for ion implanted distributions. In this report, we describe the experimental arrangement, experimental procedures, and provide time release data and diffusion coefficients for releasing ion implanted {sup 37}Cl from Zr{sub 5}Si{sub 3} and {sup 75}As, {sup 79}Br, and {sup 78}Se from Zr{sub 5}Ge{sub 3} and estimates of the diffusion coefficients for{sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga and {sup 71}Ga diffused from BN; {sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from C;more » {sup 35}Cl, {sup 68}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from Ta.« less

/pdf/selection-of-rib-targets-using-ion-implantation-at-the-50f4stt12i.pdf

Selection of RIB targets using ion implantation at the Holifield Radioactive Ion Beam Facility

Among several major challenges posed by generating and accelerating adequate intensities of RIBs, selection of the most appropriate target material is perhaps the most difficult because of the requisite fast and selective thermal release of minute amounts of the short-lived product atoms from the ISOL target in the presence of bulk amounts of target material. Experimental studies are under way at the Oak Ridge National Laboratory (ORNL) which are designed to measure the time evolution of implanted elements diffused from refractory target materials which are candidates for forming radioactive ion beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF). The diffusion coefficients are derived by comparing experimental data with numerical solutions to a one-dimensional form of Fick`s second law for ion implanted distributions. In this report, we describe the experimental arrangement, experimental procedures, and provide time release data and diffusion coefficients for releasing ion implanted {sup 37}Cl from Zr{sub 5}Si{sub 3} and {sup 75}As, {sup 79}Br, and {sup 78}Se from Zr{sub 5}Ge{sub 3} and estimates of the diffusion coefficients for{sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga and {sup 71}Ga diffused from BN; {sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from C; {sup 35}Cl, {sup 68}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from Ta.

/pdf/selection-of-rib-targets-using-ion-implantation-at-the-5e8g3up6o1.pdf

Selection of RIB targets using ion implantation at the Holifield radioactive ion beam facility

Experiments important to the future success of the Holifield Radioactive Ion Beam Facility (HRIBF) are in progress at the Oak Ridge National Laboratory which are designed to select the most appropriate target material for generating a particular radioactive ion beam (RIB). The 25-MV HHIRF tandem accelerator is used to implant stable complements of interesting radioactive elements into refractory targets mounted in a high-temperature FEBIAD ion source which is {open_quotes}on-line{close_quotes} at the UNISOR facility. The intensity versus time of implanted species, which diffuse from the high-temperature target material ({approximately}1700{degrees}C) and are ionized in the FEBIAD ion source, is used to determine release times for a particular projectile/target material combination. From such release data, diffusion coefficients can be derived by fitting the theoretical results obtained by computational solution of Fick`s second equation to experimental data. The diffusion coefficient can be used subsequently to predict the release properties of the particular element from the same material in other target geometries and at other temperatures, provided that the activation energy is also known. Diffusion coefficients for Cl implanted into and diffused from CeS and Zr{sub 5}Si{sub 3} and As, Br, and Se implanted into and diffused from Zr{sub 5}Ge{sub 3} have been derived frommore » the resulting intensity versus time profiles. Brief descriptions of the experimental apparatus and procedures utilized in the present experiments and plans for future related experiments are presented.« less

The diffusion properties of ion implanted species in selected target materials

Experiments are in progress at the Oak Ridge National Laboratory (ORNL) which are designed to select the most appropriate target materials for generating particular radioactive ion beams for the Holifield Radioactive Ion Beam Facility (HRIBF). The 25-MV tandem accelerator is used to implant stable complements of interesting radioactive elements into refractory targets mounted in a high-temperature FEBIAD ion source which is on-line at the UNISOR facility. These experiments permit selection of the target material most appropriate for the rapid release of the element of interest, as well as realistic estimates of the efficiency of the FEBIAD source. From diffusion release data information on the release times and diffusion coefficients can be derived. Diffusion coefficients for CI implanted into and diffused from CeS and Zr{sub 5}Si{sub 3} and As, Br, and Se implanted into and diffused from Zr{sub 5}Ge{sub 3} have been derived from the resulting intensity versus time profiles.

/pdf/target-selection-for-the-hribf-project-28wzbqtqel.pdf

Target selection for the HRIBF Project

Experiments designed to select the most appropriate target material for generating a particular radioactive ion beam (RIB) are in progress at the Oak Ridge National Laboratory. They are important to the future success of the Holifield Radioactive Ion Beam Facility (HRIBF). The 25-MV HHIRF tandem accelerator is used to implant stable complements of interesting radioactive elements into refractory targets mounted in a high-temperature FEBIAD ion source which is `on-line' at the UNISOR facility. The intensity versus time of implanted species, which diffuse from the high-temperature target material (approximately equals 1700 degree(s)C) and are ionized in the FEBIAD ion source, is used to determine release times for a particular projectile/target material combination. From such release data, diffusion coefficients can be derived by fitting the theoretical results obtained by computational solution of Fick's second equation to experimental data. The diffusion coefficient can be used subsequently to predict the release properties of the particular element from the same material in other target geometries and at other temperatures, provided that the activation energy is also known. Diffusion coefficients for Cl implanted into and diffused from CeS and Zr5Si3 and As, Br, and Se implanted into and diffused from Zr5Ge3 have been derived from the resulting intensity versus time profiles. Brief descriptions of the experimental apparatus and procedures utilized in the present experiments and plans for future related experiments are also presented.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

/pdf/diffusion-properties-of-ion-implanted-species-in-selected-3bjzr5zo1t.pdf

Diffusion properties of ion-implanted species in selected target materials

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The diffusion properties of ion implanted species in selected target materials

Target selection for the HRIBF Project

Diffusion properties of ion-implanted species in selected target materials