S. Holzer
Vienna University of Technology
26 Papers
116 Citations
S. Holzer is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Electromigration & Thermoelectric generator. The author has an hindex of 6, co-authored 26 publications. Previous affiliations of S. Holzer include University of Vienna.
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Papers
A multi-purpose Schrödinger-Poisson Solver for TCAD applications
Markus Karner,Andreas Gehring,S. Holzer,Mahdi Pourfath,Martin Wagner,W. Goes,M. Vasicek,Oskar Baumgartner,C. Kernstock,Klaus Schnass,Gerhard Zeiler,Tibor Grasser,Hans Kosina,Siegfried Selberherr +13 more
TL;DR: The Vienna Schrodinger-Poisson solver (VSP) as mentioned in this paper is a multi-purpose quantum mechanical solver for investigations on nano-scaled device structures, including gate dielectrics.
Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions
G. Span,Martin Wagner,S. Holzer,Tibor Grasser +3 more
- 01 Aug 2006
TL;DR: In this article, a new method for thermoelectric power generation using large area pn-junctions is presented, which is achieved by changing the amount and distribution of generation centers and the shape of the temperature gradient as well as the choice of material system.
Power Output Improvement of Silicon-Germanium Thermoelectric Generators
Martin Wagner,G. Span,S. Holzer,Oliver Triebl,Tibor Grasser,Vassil Palankovski +5 more
- 20 Oct 2006
TL;DR: In this article, the authors present a thermoelectric generator using large area pn-junctions, where thermally generated carriers are separated by the gradient of the built-in potential caused by the pn junction.
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures
S. Holzer,Rainer Minixhofer,Clemens Heitzinger,Johannes Fellner,Tibor Grasser,Siegfried Selberherr +5 more
TL;DR: An approach for determining higher order coefficients of the electrical and thermal conductivities for different materials is presented, intended to be applied to optimize devices with different material compositions and geometries as well as for achieving an optimum of speed and reliability.
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Quantum correction for DG MOSFETs
TL;DR: In this article, the eigenenergies and expansion coefficients of the wave functions are tabulated for arbitrary parabolic approximations of the potential in the quantum well for thin double gate (DG) MOSFETs.