[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Topological edge states are observed inside a large band gap on the surface of ZrTe${}_{5}$ crystals, paving the way for topological quantum computing devices.

https://link.aps.org/pdf/10.1103/PhysRevX.6.021017

Evidence for Topological Edge States in a Large Energy Gap near the Step Edges on the Surface of ZrTe 5

Recent discovery of bulk insulating topological insulator (TI) Bi2–xSbxTe3–ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi2–xSbxTe3–ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

Work function of bulk-insulating topological insulator Bi2–xSbxTe3–ySey

Recent discovery of bulk insulating topological insulator (TI) Bi2-xSbxTe3-ySey paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of work function in Bi2-xSbxTe3-ySey by high-resolution photoemission spectroscopy. The obtained work-function values (4.95-5.20 eV) show a systematic variation with the composition, well tracking the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey

MnBi8Te13 is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy (μ-TrARPES), we resolve the electronic structures and reveal the ultrafast dynamics upon photoexcitation. Photoinduced filling of the surface state hybridization gap is observed for the Bi2Te3 quintuple layer directly above MnBi2Te4 accompanied by a nontrivial shift of the surface state, suggesting light-tunable interlayer interaction. Relaxation of photoexcited electrons and holes is observed within 1-2 ps. Our work reveals photoexcitation as a potential control knob for tailoring the interlayer interaction and surface state of MnBi8Te13.

Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi8Te13.

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, i. e., the provision of knobs with which to tune properties, stoichiometric variation and surface decoration are two effective approaches that have been followed. In angleresolved photoelectron spectroscopy (ARPES) experiments, both approaches are seen to lead to electronic band-structure changes. Most importantly, such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases. The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of super-band-gap light a topological insulator surface has been exposed to under typical ARPES experimental conditions. Our results show that this third knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous and direct competition with the latter. The data clearly point towards surface photovoltage and photoinduced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary, and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a detailed framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature, and photon exposure. These knobs can be used in conjunction to fine tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

/pdf/dirac-states-with-knobs-on-interplay-of-external-parameters-kxrb0q8jke.pdf

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

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Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators