https://escholarship.org/content/qt4hw2r7qc/qt4hw2r7qc.pdf?t=krne51

Material Removal Mechanisms in Lapping and Polishing

Recently, a comprehensive model has been developed by Luo and Dornfeld ("Material removal mechanism in chemical mechanical polishing: theory and modeling", IEEE Trans. Semiconduct. Manufact., vol. 14, pp. 112-133, May 2001) to explain the material removal mechanism in chemical mechanical planarization (CMP). Based on the model, the abrasive size distribution influences the material removal from two aspects, one, the number of active abrasives, and the other, the size of the active abrasives. In this paper, experimental evidence supporting this view of abrasive size effects is discussed. A detailed model of wafer-abrasive-pad contact is developed to explain how and where abrasive size distributions come into the comprehensive material removal model. A material removal rate formulation as a function of abrasive size distribution is proposed and verified. In the future, the application of the model to the CMP process optimization, for example, improving the nonuniformity, or obtaining minimum surface scratching and preferred material removal rate by changing abrasive size distribution, may be attempted.

Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification

Compliant grinding and polishing refers to a class of fine material processing methods relying on one or more system element being compliant with the workpiece surface in a controllable and reversible manner, thus being distinct from conventional rigid wheel grinding and polishing. The resulting surface adaptability greatly facilitates the ultra-precision machining of freeform surfaces, with a level of accuracy and productivity difficult to achieve with conventional rigid processing systems. Aiming for a comprehensive review of signal advances on this topic in the last decades, this paper introduces a multi-level compliance categorization system to sort between distinctive processes. For each category, various perspectives are explored that pertain to principles, methodologies, and physical properties such as material removal and surface integrity. Finally, relative merits are analyzed, together with a discussion of the outlook and future trends.

Compliant grinding and polishing: A review

Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process because of its local and global planarization ability in fabricating highly integrated devices. The CMP process uses both chemical reaction and mechanical polishing simultaneously. The combination of chemical reaction and mechanical removal in CMP is so complex that understanding the material removal mechanism has been a challenge for researchers and engineers. The chemical reaction mechanism is determined by the chemical composition of the CMP slurry and the material property of the target material. However, the mechanical action is a complex result of various mechanical factors of the process parameters and consumables. The mechanical material removal is a cornerstone of understanding and predicting CMP results. This review focuses on the mechanical aspects in CMP in terms of the process parameters and consumables of the CMP process that directly influence the material removal characteristics.

Mechanical Aspects of the Chemical Mechanical Polishing Process: A Review

Ceria-based and fumed silica-based systems are compared for oxide chemical mechanical polishing (CMP) in terms of defectivity and removal rate (RR). Ceria-based slurries yield RR ca. threefold that of conventional silica slurries but result in enhanced defectivity. To reduce defectivity, composite structures comprising a 300 nm polymer core coated by 14 nm ceria particles have been investigated. The polymer core shows mechanical properties that are highly tunable by variation of synthesis parameters, while the major advantage of the ceria coating is an enhanced chemical action of the abrasive particles. We report the evolution of RR, root-mean-square roughness, and defects during silica CMP experiments using different abrasive types at pH 3 and 10. Interestingly, the two types of composites, achieved by either silane coupling agents or electrostatic attractive interactions between the core and the coating, exhibit different RR. This is attributed to differences in morphology and surface composition. Overall, the ceria composites result in reduced defectivity after CMP due to the springlike effect coming from the elastic component of the core, compared with conventional slurry material.

https://iopscience.iop.org/article/10.1149/1.2740038/pdf

Composite Polymer Core–Ceria Shell Abrasive Particles during Oxide CMP: A Defectivity Study

It is well known that the chemical reaction between an oxide layer and a water-based slurry produces a softer hydroxylated interface layer. During chemical-mechanical polishing (CMP), it is assumed that material removal occurs by the plastic deformation of this interface layer. In this paper, the behavior of the hydroxylated layer is modeled as a perfectly plastic, material, and a mechanistic model for material removal rate (MRR) in CMP is developed. The deformation profile of the soft pad is approximated as the bending of a thin elastic beam. In addition to the dependence of MRR on pressure and relative velocity, the proposed plasticity-based model is also capable of delineating the effects of pad and slurry properties. The plasticity-based model is utilized to explore the effects of various design parameters (e.g., abrasive shape, size and concentration, and pad stiffness) on the MRR. Model predictions are compared with existing experimental observations from glass polishing, lapping, and CMP.

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

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A plasticity-based model of material removal in chemical-mechanical polishing (CMP)