S. G. Wang
Chinese Academy of Sciences
11 Papers
43 Citations
S. G. Wang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Hall effect & Tunnel magnetoresistance. The author has an hindex of 8, co-authored 9 publications.
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Papers
Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions.
S. G. Wang,R. C. C. Ward,Thorsten Hesjedal,Xg-G. Zhang,C. Wang,Amit Kohn,Qinli Ma,Jia Zhang,Hf F. Liu,Xf F. Han +9 more
TL;DR: Recent studies on the interface characterization of MgO-based epitaxial MTJs by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin-dependent tunneling spectroscopic, will be presented.
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Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions
Guo-Qian Yang,Di Li,S. G. Wang,Qinli Ma,Shiheng Liang,Hongyuan Wei,Xiuwen Han,Thorsten Hesjedal,R. C. C. Ward,Amit Kohn,Ayala Elkayam,N. Tal,Xg-G. Zhang,Xg-G. Zhang +13 more
TL;DR: In this article, the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O.
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Effect of MgO/Co interface and Co/MgO interface on the spin dependent transport in perpendicular Co/Pt multilayers
Jing-Yan Zhang,Guo-Yu Yang,Guo-Yu Yang,S. G. Wang,Yichong Liu,Zhi-Duo Zhao,Zheng-Long Wu,Shilei Zhang,Xiao Chen,Chun Feng,Gui Yu +10 more
TL;DR: In this article, the effect of the metal/oxide interface on spin-dependent transport properties in perpendicular [Co/Pt]3 multilayers was investigated, and it was shown that the MgO/Co interface and Co/MgO interface including chemical states play a dominant role on spindependent transport, leading to different anomalous Hall behavior.
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Nonvolatile full adder based on a single multivalued hall junction
Shilei Zhang,L. J. Collins-McIntyre,J. Y. Zhang,S. G. Wang,G. H. Yu,Thorsten Hesjedal +5 more
- 23 Oct 2013
TL;DR: This work experimentally demonstrate a nonvolatile full adder that is based on a single Hall junction, the extraordinary Hall balance (EHB), which can be easily integrated into complex logic circuits for logic-in-memory architectures.
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Stacking and thickness effects on cross-plane thermal conductivity of hexagonal boron nitride
TL;DR: In this paper , the stacking and thickness effects on the cross-plane thermal conductivity of hexagonal boron nitride (h-BN) have been investigated and it was shown that h-BN can be significantly modulated by both the stacking structure and thickness, which is unexpected from the viewpoint of its smooth inplane structure and weak interlayer interaction.
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