Radio frequency (RF) magnetron sputtering was used to deposit tungsten disulfide (WS2) thin films on top of soda lime glass substrates. The deposition power of RF magnetron sputtering varied at 50, 100, 150, 200, and 250 W to investigate the impact on film characteristics and determine the optimized conditions for suitable application in thin-film solar cells. Morphological, structural, and opto-electronic properties of as-grown films were investigated and analyzed for different deposition powers. All the WS2 films exhibited granular morphology and consisted of a rhombohedral phase with a strong preferential orientation toward the (101) crystal plane. Polycrystalline ultra-thin WS2 films with bandgap of 2.2 eV, carrier concentration of 1.01 × 1019 cm−3, and resistivity of 0.135 Ω-cm were successfully achieved at RF deposition power of 200 W. The optimized WS2 thin film was successfully incorporated as a window layer for the first time in CdTe/WS2 solar cell. Initial investigations revealed that the newly incorporated WS2 window layer in CdTe solar cell demonstrated photovoltaic conversion efficiency of 1.2% with Voc of 379 mV, Jsc of 11.5 mA/cm2, and FF of 27.1%. This study paves the way for WS2 thin film as a potential window layer to be used in thin-film solar cells.

/pdf/ws2-a-new-window-layer-material-for-solar-cell-application-21k8025x5z.pdf

WS2: A New Window Layer Material for Solar Cell Application.

https://iopscience.iop.org/article/10.1088/2053-1591/ab6779/pdf

Structure and optical properties of polycrystalline ZnSe thin films: validity of Swanepol’s approach for calculating the optical parameters

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V2O5/Cu heterostructure, with a V2O5 back-surface field (BSF) layer, SnO2:F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μm-thick-CIGS absorber layer with V2O5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a VOC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.

https://aip.scitation.org/doi/pdf/10.1063/5.0138354

Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance

In this framework, the ZnSe layer was prepared via the well-known thermal evaporation method at various thicknesses. The thicknesses of the ZnSe layer were monitored by the quartz crystal monitor type (FTM4, Edwards). The influence of ZnSe film’s thickness on the structure, optical and electrical properties were studied. Using XRD patterns, the structural parameters of the ZnSe layer have been calculated. It is observed that the crystallite size increases as the film thickness increases, but the lattice strain decreases. SEM measurement results show that as the thickness of the ZnSe film increases, the grain size improves. The electrical properties of ZnSe films at various thicknesses have been measured via a standard four-point probe method. It can be noticed that as the ZnSe film’s thickness increases, the electrical conductivity also increases. This means that ZnSe film with higher electrical conductivity will be more suitable for the high-efficiency ZnSe/CdTe solar cell. In a higher absorption region for both T (λ) and R (λ), the absorption coefficient has been determined, and thus the optical energy gap, which is increased from 2.62 to 2.91 eV. At the same time, the effect of the ZnSe layer with different thicknesses on the performance of the ZnSe/CdTe solar cell was discussed. The figure of merit has been computed to determine the quality of the thin films. The parameters of the hetero-junction have been measured, such as the correction ratio, which is improved by increasing the film’s thickness. The junction resistance and parasitic resistance were also calculated which is decreased with increasing of the thickness film, thereby improving the performance of fabricated ZnSe/CdTe solar cell.

The significant role of ZnSe layer thickness in optimizing the performance of ZnSe/CdTe solar cell for optoelectronic applications

Impact of different annealing conditions on physical properties of ZnSe thin films for ecofriendly buffer layer applications

Physical properties of ZnSe thin films: Air and vacuum annealing evolution to buffer layer applications

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Physical properties of ZnSe thin films: Air and vacuum annealing evolution to buffer layer applications