Photolysis of Si2H6 using 193 nm radiation from an ArF excimer laser has been used to deposit homoepitaxial Si films in the temperature range of 250 to 350°C. Photolytic decomposition of Si2H6 generates growth precursors which adsorb on to a hydrogenated Si surface. A growth kinetic model is proposed based on single-photon 193 nm absorption by Si2H6, and chemical reaction of the photofragments as they diffuse to the sub-strate surface. With the laser beam positioned parallel to the Si substrate, the deposi-tion yield of solid Si from photo-excited Si2H6 is estimated to be 0.20 ± 0.04. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1–15 mJ/cm2 · pulse and 5–40 mTorr, respectively, and epitaxial films are deposited when laser intensity and Si2H6 partial pressure conditions are such that the initial photofragment concentration is less than ~1013 cm−3.

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ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si 2 H 6 : a simple growth kinetic model

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ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si 2 H 6 : a simple growth kinetic model