S.-B. Carlsson
Lund University
16 Papers
196 Citations
S.-B. Carlsson is an academic researcher from Lund University. The author has contributed to research in topics: Coulomb blockade & Heterojunction. The author has an hindex of 6, co-authored 16 publications.
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Papers
Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope
TL;DR: In this article, a technique for the fabrication of lateral nanometer-scale devices is described, in which individual metallic nanoparticles are imaged, selected and manipulated into a gap between two electrical leads with the tip of an atomic force microscope.
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Single-electron devices via controlled assembly of designed nanoparticles
T. Junno,Martin Magnusson,S.-B. Carlsson,Knut Deppert,Jan Olle Malm,Lars Montelius,Lars Samuelson +6 more
TL;DR: In this article, an aerosol-based nanoparticle fabrication method was used to construct coulomb blockade devices and showed that they operate at temperatures above 150K, which is the state-of-the-art performance for a single-electron transistors.
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Electron transport at Au/InP interface with nanoscopic exclusions
TL;DR: In this article, an investigation of electron transport at the Au/InP metal semiconductor interface in the presence of nanoscopic barrier inhomogeneities is presented, focusing on the transport regime wherein the low barrier inhoming regions are pinched off by the depletion potential of the surrounding higher barrier region.
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Mechanical tuning of tunnel gaps for the assembly of single-electron transistors
TL;DR: In this article, a combination of atomic-force microscopy manipulation of nanodiscs and in situ electrical measurements was used to form statically stable tunnel gaps between the discs and lithographically defined electrodes.
27
Single-electron tunneling effects in a metallic double dot device
TL;DR: In this paper, differential conductance measurements on a gold double-dot structure at 4.2 K were performed and the occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages.
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