17 Papers
37 Citations
S. Ašmontas is an academic researcher from Saint Petersburg State University of Information Technologies, Mechanics and Optics. The author has contributed to research in topics: Microwave & Diode. The author has an hindex of 3, co-authored 17 publications.
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Papers
Photovoltage formation across GaAs p–n junction under illumination of intense laser radiation
S. Ašmontas,Jonas Gradauskas,Algirdas Sužiedėlis,A. Šilėnas,Edmundas Širmulis,Viktoras Vaičikauskas,Vytautas Vaičiūnas,O. Žalys,Leonid Fedorenko,Lev Petrovich Bulat +9 more
TL;DR: In this article, the photovoltaic effect in GaAs p-n junction under laser excitation at 10.6 and 1.06μm wavelengths has been investigated experimentally.
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Enhancement of excitonic photoluminescence in silicon-dopedn+/i-GaAs structures
Viktorija Kazlauskaitė,Algirdas Sužiedėlis,Aurimas Čerškus,Jonas Gradauskas,S. Ašmontas,Jurgis Kundrotas +5 more
TL;DR: In this article, the photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer were measured in the range of 3.6-77 K crystal lattice temperatures and at various laser excitation energies.
CO2 Laser Induced Hot Carrier Photoeffect in HgCdTe
S. Ašmontas,Jonas Gradauskas,Dalius Seliuta,Algirdas Sužiedėlis,Edmundas Širmulis,Gintaras Valušis,V. V. Tetyorkin +6 more
TL;DR: In this article, the authors present experimental evidence of fast hot carrier photosignal over HgCdTe p-n junction induced by high intensity CO 2 laser pulses, where the signal polarity is opposite to that of an ordinary photovoltaic emf.
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