다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

A device isolation film is formed in a semiconductor substrate at a border portion between a first region and a second region for defining a first active region in the first region and a second active region in the second region. A gate insulating film and a gate electrode is formed over the semiconductor substrate in the first region. A first photoresist film covering the second region and having an opening exposing the first active region and having an edge on the border portion of the opening positioned nearer the second active region than a middle of the device isolation film is formed over the semiconductor substrate with the gate electrode. Impurity ions are implanted from a direction tilted from a normal direction of the semiconductor substrate with the first photoresist film and the gate electrode as a mask to form pocket regions in the semiconductor substrate on both sides of the gate electrodes.

Semiconductor device and method of manufacturing the same

Surface-enhanced spectroscopy techniques using plasmonic nanoantennas or metasurfaces help to reduce the detection limit for biochemical sensing. While infrared spectroscopy is an excellent tool to identify a molecular species, a typically expensive IR light source is needed. We report a surface enhanced spectroscopy technique based on the thermal emission of III–V semiconductor metasurfaces. The presence of a molecular species grafted on the surface modulates the emission spectrum analogously to the modulation achieved in surface-enhanced infrared absorption (SEIRA) spectroscopy. The vibrational fingerprint of the molecular species is detected due to the electromagnetic field enhancement obtained with a plasmonic metasurface. Because the metasurface acts simultaneously as radiation source and sensor chip, the experimental setup is simplified and therefore more compact and potentially more cost-efficient. This novel approach of surface-enhanced thermal emission spectroscopy (SETES) is appealing for miniat...

Surface-Enhanced Thermal Emission Spectroscopy with Perfect Absorber Metasurfaces

The invention relates to image focus. In particular, it relates to a focus assist system that conveys focus level data to a user. There are a wide variety of different display methods, including, but not limited to, graphs, highlights, symbols, and varied levels of brightness or color.

Focus assist system and method

To inform the users of the time necessary for focus to be achieved by changing the focal mark shown on the display monitor, second by second, corresponding to the elapsed time from the start of the auto focus operation until focus is achieved The users are informed of the status of the auto focusing operations, and have a good idea of how much longer it will take for focusing to be completed As a result, it increases the probability of users holding the camera still, so as to produce precisely focused photographs

Image pickup device and focusing notification method

PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses introduction of oxygen into a group III-V compound semiconductor layer containing Al due to growth interruption. SOLUTION: The semiconductor device includes: a semiconductor laminated structure constituted of a first semiconductor layer formed of a first group III-V compound semiconductor containing Al as a constituent element on a semiconductor substrate, and a surface protection layer formed of a second group III-V compound semiconductor having a thickness of 2 to 8 atom layers and not containing Al as a constituent element and disposed on an upper surface of the first semiconductor layer or in the first semiconductor layer; and a second semiconductor layer formed of a third group III-V compound semiconductor and formed on an upper surface of the semiconductor laminated structure. COPYRIGHT: (C)2010,JPO&INPIT

Semiconductor device, and method of manufacturing the same

To suppress the surface leakage current of InAs/GaSb Type-II superlattice (T2SL) infrared photodetectors, atomic layer deposited (ALD)-Al2O3 passivation effects have been investigated. By using the ALD-Al2O3 passivation layers, surface leakage current was more effectively suppressed than by using chemical vapor deposited-SiO2 passivation layers. The deposition temperature of ALD Al2O3 played an important role in minimizing the surface leakage current of T2SL infrared photodetectors. We found that the dark current density of mid-wavelength (MW) p-i-n structures was limited by their bulk components with Al2O3 passivation layers deposited at or below 200 °C, while the dark current density increased with the surface leakage when the layers were deposited at 260 °C. From the capacitance–voltage analysis, it was found that the deposition at 260 °C led to a large interface trap density at the Al2O3/GaSb interface. The results of X-ray photoelectron (XPS) spectroscopy show that the spectra of Sb2O3 decreases while that of Ga2O3 increases when the deposition temperature increases from 200 to 260 °C. This indicates that the reaction of Sb2O3 with GaSb is thermally enhanced. Based on these results, we conclude that Ga2O3 and/or elemental Sb may lead to an additional leakage path. Hence, suppression of the thermal decomposition of Sb-related oxides during Al2O3 deposition is required to obtain good passivation effects.

ALD-Al2O3 passivation effects on surface characteristics of InAs/GaSb type-II superlattice infrared photodetectors

In the development of InAs/GaSb Type-II superlattice (T2SL) infrared photodetectors, the surface leakage current at
the mesa sidewall must be suppressed. To achieve this requirement, both the surface treatment and the passivation layer
are key technologies. As a starting point to design these processes, we investigated the GaSb oxide in terms of its growth
and thermal stability. We found that the formation of GaSb oxide was very different from those of GaAs. Both Ga and
Sb are oxidized at the surface of GaSb. In contrast, only Ga is oxidized and As is barely oxidized in the case of GaAs.
Interestingly, the GaSb oxide can be formed even in DI water, which results in a very thick oxide film over 40 nm after
120 minutes. To examine the thermal stability, the GaSb native oxide was annealed in a vacuum and analyzed by XPS
and Raman spectroscopy. These analyses suggest that SbOx in the GaSb native oxide will be reduced to metallic Sb
above 300°C. To directly evaluate the effect of oxide instability on the device performance, a T2SL p-i-n photodetector
was fabricated that has a cutoff wavelength of about 4 μm at 80 K. As a result, the surface leakage component was
increased by the post annealing at 325°C. On the basis of these results, it is possible to speculate that a part of GaSb
oxide on the sidewall surface will be reduced to metallic Sb, which acts as an origin of additional leakage current path.

Thermal instability of GaSb surface oxide

Dual-band infrared photodetectors with a modified pBp design have been demonstrated. The modified pBp structure consisted of a p-type InAs/GaSb superlattice for long-wavelength (LW) detection and a p-type InAs/GaSb/AlSb based superlattice for mid-wavelength (MW) detection, which were separated by a hole barrier consisting of an InAs/AlSb superlattice. Our pBp device showed that dual-band detection was possible by changing the bias polarity of the applied voltage. By using an InAs/GaSb/AlSb based superlattice as an MW absorber for a pBp photodetector, a 100 % cutoff wavelength was blue-shifted from 8 μm to 7 μm compared with a conventional InAs/GaSb superlattice, while maintaining the same 50 % cutoff wavelength of around 6.4 μm. Quantum efficiency per period of the modified MW absorber was comparable with that of a conventional MW absorber. These results indicate that our modified pBp structure is expected to be a promising candidate for dual-band infrared photodetectors.

Dual-band response in Type-II superlattice infrared photodetectors with a modified pBp design

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Ryo Suzuki

Author Tools

Chat about Author