Ryan Sporer
GlobalFoundries
32 Papers
40 Citations
Ryan Sporer is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Layer (electronics) & Computer science. The author has an hindex of 4, co-authored 19 publications.
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Papers
14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Zoran Krivokapic,Uzma Rana,Rohit Galatage,Ali Razavieh,Ahmedullah Aziz,Jinping Liu,Jiajun Shi,H. J. Kim,Ryan Sporer,Claudy Serrao,A. Busquet,P. Polakowski,Johannes Müller,Walter Kleemeier,Jacob Ajey Poovannummoottil,D. Brown,Andreas Knorr,Rick Carter,Srinivasa Banna +18 more
- 01 Dec 2017
TL;DR: In this paper, Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-the-art 14nm FinFET technology without any further process modification.
233
Impact of aggressive fin width scaling on FinFET device characteristics
Xiaoli He,Jody A. Fronheiser,Pei Zhao,Zhaoying Hu,Suresh Uppal,Xusheng Wu,Yue Hu,Ryan Sporer,Liqiao Qin,R. Krishnan,El Mehdi Bazizi,Rick Carter,K. Tabakman,Ashish Kumar Jha,Hong Yu,Owen Hu,Dongil Choi,Jae Gon Lee,Srikanth Samavedam,D. K. Sohn +19 more
- 01 Dec 2017
TL;DR: In this article, the benefits, trade-offs and limitations of fin width scaling on logic and SRAM device characteristics were investigated, and it was found that there is a critical fin width (Wc) at ∼4nm.
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Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges
Dina H. Triyoso,Rick Carter,J. Kluth,Klaus Hempel,M. Gribelyuk,L. Kang,Anil Kumar,Bob Mulfinger,P. Javorka,Kasun Punchihewa,Amy Child,Timothy J. McArdle,Judson R. Holt,Sherry Straub,Ryan Sporer,P. Chen +15 more
- 27 Jun 2016
TL;DR: It is shown that compared to HKMG on bulk Si, HKMG FDSOI transistors have less VT variation due to its undoped channel, and F DSOI unique back-biasing capability offers additional knob to further reduce VT variation.
17
Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs
Rinus T. P. Lee,N. Petrov,Kassim Joseph K,M. Gribelyuk,J. Yang,Linjun Cao,Kong Boon Yeap,Tian Shen,A. Zainuddin,Ashwini Chandrashekar,Shishir Ray,Eswar Ramanathan,Anbu Selvam Km Mahalingam,Ritesh Ray Chaudhuri,Jay Mody,D. Damjanovic,Zhiguo Sun,Ryan Sporer,T. J. Tang,Huang Liu,Jinping Liu,Bharat Krishnan +21 more
- 18 Jun 2018
TL;DR: In this paper, a 35% reduction in Cu interconnect resistance was achieved, which delivered a 15% improvement in RC and a gain of 2-5% in I Dsat.
16
High Performance Avalanche Photodiode in a Monolithic Silicon Photonics Technology
Asif Chowdhury,Subramanian Krishnamurthy,Abdelsalam Aboketaf,Jacquelyn Phang,Ludmila Popova,Michelle Zhang,Javier Ayala,Yusheng Bian,Michal Rakowski,Francis O. Afzal,Takako Hirokawa,Won Suk Lee,Judson R. Holt,Massimo Sorbara,Vishal Dhurgude,Crystal M. Hedges,Frank Pavlik,Stan Senger,Kate McLean,Andy Stricker,Ryan Sporer,Karen A. Nummy,Dave Riggs,R. Augur,Wenhe Lin,Jae Gon Lee,Vikas Gupta,Eng Hua Lim,Kenneth J. Giewont,Theodore Letavic,John G. Pellerin +30 more
- 01 Mar 2022
TL;DR: In this article , a waveguide-integrated germanium-on-silicon avalanche photodiode in a monolithic silicon photonics technology, with TE responsivity of 26 A/W at 1310 nm wavelength at −5 V operating bias with a 3-dB bandwidth of > 30 GHz, was demonstrated.
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