In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology is implemented into a common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic operation and design implications are discussed on the basis of quasi-static electrical measurements of fabricated nJFET, pJFET and circuit breaker devices. The design of experiment including a variation of channel length and channel doping dose reveals a distinct effect on the design targets, especially on on-state resistance, trigger current and blocking voltage. The investigated devices exhibit trigger current density levels of up to 2.8 A/cm2 and self-sustained blocking capability up to 795 V DC-link voltage. On-state resistance at room temperature is determined to 0.93 $\Omega $ cm2 but drastically decreases at elevated temperatures, as is shown in the experiments.

/pdf/a-monolithically-integrated-sic-circuit-breaker-32go7vfcl3.pdf

A Monolithically Integrated SiC Circuit Breaker

The increasing load density of direct current (DC) distribution system leads to an increase in system capacity and short-circuit fault current. However, due to the limited capacity of a single semiconductor device, solid state circuit breaker (SSCB) with one semiconductor device is difficult to apply to high current applications. This paper proposes a 400V/300A intelligent SSCB with 8 parallel normally-on SiC JFETs as the main static switch, a Microprocessor Unit (MCU) as the intelligent controller and a fast-starting isolated DC/DC converter as the protection driver. This article focuses on Current sharing and balancing among the parallel SiC JFETs. The short circuit experiment was performed using the designed SSCB prototype. The experimental results show that the proposed SSCB can realize short-circuit protection in several microseconds and overload protection in several hundred microseconds. In addition, good dynamic and static current sharing effect is achieved in this paper.

A 400V/300A Ultra-Fast Intelligent DC Solid State Circuit Breaker Using Parallel Connected SiC JFETs

Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to olid-state circuit breakers

Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests

A practical method to test post-manufactured mechanical thermal and thermal-magnetic low voltage Moulded Case Circuit Breakers (MCCBs) is presented in this paper. Many standards pertaining to the ratings of low voltage MCCBs exist, but little literature exists on how to verify its specified rating post-manufacturing. In this work, a variable voltage over fixed cable and MCCB switch contact resistance test method is used to verify ratings. This method uses two variable transformers driven by two separate stepper motors controlled by a microcontroller with a final step-down toroid transformer. To measure the circuit breaker, trip current level an accurate Hall-Effect current sensor was used and the trip time is determined by a microcontroller-based peripheral timer. Testing was conducted on four different types of circuit breakers, namely: C6, D10, C16, and C20 in order to verify the test jig functionality with good results.

A Cost-Effective Low-Voltage Moulded-Case Circuit Breaker Test Jig

Solid State Circuit Breakers (SSCB) are a growing applications of Wide-Band-Gap (WBG) semiconductor devices, because of their ability to perform arc-less interruption of high DC currents. However, a necessary exercise before applying any novel switching device to the breaker space is the evaluation of its switching characteristics at the breaker's rated voltage and current. The turn ON and turn OFF losses have been accepted as two key parameters for performance evaluation. Since SSCB's are normally closed in their nominal operational state and are opened in fault conditions, this makes conduction losses the dominant form of thermal stress. However, characterizing the switching performance of an SSCB is also very useful to validate protection functionality, speed and ability to perform within its safe operating area. Towards that end, Double Pulse Testing (DPT) which is a testing apparatus intended for characterizing single semiconductor devices, has been adopted in this paper as a platform for SSCB testing of switching losses and dynamics, off-state voltage blocking and on-state current interruption. Such a platform provides a basis for comparative analysis of different SSCB implementations without having to expend energy by continuously operating at rated power. The DPT platform was used to validate an SSCB package from ATOMPower Inc, and the data obtained from the test was further post-processed in Python. MATLAB/Simulink software has been used for demonstration purposes and experimental results are included in this paper.

Characterization and Performance of 600V 100A Solid-State Circuit Breaker

With the adoption of electric vehicles (EV) continuing to rise on an astronomical scale, the focus has now shifted to setting up the supporting charging infrastructure. The present EV charging methodology was developed at a time when electrified transportation seemed to be a futuristic fantasy because of which it is incoherent and fragmented, without a shared vision. There arises a need for an overhaul in the approach and to come up with a solution for high-density EV charging that is unique and scalable. This paper discusses an innovative charging scheme that utilizes the advancements in power distribution using wide band gap semiconductors (WBGs). We designed a Solid-State Circuit Breaker (SSCB) using these semiconductors and added vehicle communication protocol to enable EV charging functionality. The ability to control power digitally using SSCB can be leveraged to overcome the challenges associated with setting up wide-scale EV charging infrastructures such as complexity, cost, energy management, maintenance overhead, and scalability.

High-Density Electric Vehicle Charging using Wide Bandgap Semiconductors

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Characterization and Performance of 600V 100A Solid-State Circuit Breaker

High-Density Electric Vehicle Charging using Wide Bandgap Semiconductors