Large-Scale Fabrication of Boron Nitride Nanosheets and Their Utilization in Polymeric Composites with Improved Thermal and Mechanical Properties

Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride.

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that graphene−boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

https://absimage.aps.org/image/MAR11/MWS_MAR11-2010-006455.pdf

Tunable band gaps in bilayer graphene-BN heterostructures

/pdf/defect-and-impurity-properties-of-hexagonal-boron-nitride-56ri5jq2ad.pdf

Defect and Impurity Properties of Hexagonal Boron-nitride

Here, we report on the large-area synthesis of hBN layer at a comparatively lower temperature using ammonia borane as precursor by microwave assisted surface wave plasma (MW-SWP) chemical vapour deposition (CVD). The solid precursor was sublimed inside the CVD chamber and decomposed to form plasma radicals, which allowed the growth of hBN layer at a lower temperature (∼500 °C). The growth of hBN on Cu catalyst and Si wafer was confirmed by X-ray photoelectron spectroscopy, ultraviolet absorption spectroscopy, Fourier-transform infrared spectroscopy and transmission electron microscopy analysis. The hBN film synthesized on Cu catalyst showed a sharp absorption peak at 276 nm wavelength corresponding to an optical band gap of ∼4.1 eV, owing to the incorporation of carbon and oxygen doping impurities. The reduction of optical band gap of the hBN film with impurity doping can be significant to tune its optoelectronic properties. Thus, the demonstrated MW-SWP-CVD process can be significant to synthesize hBN layers independent of the catalytic behaviour of the substrate, thereby opening enormous possibilities of transfer-free application for device fabrication and as transparent coating on various surfaces.

/pdf/low-temperature-wafer-scale-synthesis-of-hexagonal-boron-1ccm0bz3ij.pdf

Low temperature wafer-scale synthesis of hexagonal boron nitride by microwave assisted surface wave plasma chemical vapour deposition

Encapsulation and its effect on two-dimensional (2D) dichalcogenides layered materials are of significant importance for electronic device fabrication. Here, we developed a dry and rapid encapsulation method for the 2D dichalcogenides by coating a carbonaceous film at room temperature using a plasma technique. Thin encapsulation film is coated on dichalcogenide crystals by microwave assisted surface wave plasma (MW-SWP) chemical vapor deposition (CVD) within a very short duration. Photoluminescence (PL) analysis shows the influence on excitation as well as the emission light with the coating of a carbonaceous film. The encapsulated dichalcogenide samples remain intact after heating at 200 °C as observed by PL and microscopic analysis. We also demonstrate obtaining stable photoconductivity for the dichalcogenide layers with encapsulation of a carbonaceous film. The rapid and dry coating technique at room temperature can be extended to various other 2D materials as the MW-SWP process allows damage-free encapsulation.

/pdf/encapsulation-of-transition-metal-dichalcogenides-crystals-38usw4o1k0.pdf

Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Here we introduce the application of low temperature buffer (LTB) layer for the growth of carbon nano walls (CNW) by plasma enhanced chemical vapor deposition (PECVD) method. The facilitation by LTB on the growth of CNW was investigated. The measured electrical properties showed that CNW grown on LTB (L-CNW) has enhanced electrical characteristics compared to as-grown CNW (as-CNW). Raman spectra of L-CNW were compared with as-CNW. The de-convoluted graphitic peaks showed a small deviation from the mean value with regard to change in deposition conditions. The comparison showed enhanced film quality for L-CNW and the graphitization appeared to be more prominent. Moreover, the LTB layer improved the self-alignment of CNWs that enables them to be used as metallic electrodes in surface acoustic wave (SAW) devices and transducers.

Effects of low temperature buffer on carbon nano wall’s growth

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Papers

Low temperature wafer-scale synthesis of hexagonal boron nitride by microwave assisted surface wave plasma chemical vapour deposition

Encapsulation of transition metal dichalcogenides crystals with room temperature plasma deposited carbonaceous films

Effects of low temperature buffer on carbon nano wall’s growth