We present a first on-chip positron accelerator based on dielectric laser acceleration. This innovative approach significantly reduces the physical dimensions of the positron acceleration apparatus, enhancing its feasibility for diverse applications. By utilizing a stacked acceleration structure and far-infrared laser technology, we are able to achieve a seven-stage acceleration structure that surpasses the distance and energy gain of using the previous dielectric laser acceleration methods. Additionally, we are able to compress the positron beam to an ultrafast sub-femtosecond scale during the acceleration process, compared with the traditional methods, the positron beam is compressed to a greater extent. We also demonstrate the robustness of the stacked acceleration structure through the successful acceleration of the positron beam.

On chip ultrafast stackable dielectric laser positron accelerator


 Dielectric laser accelerators (DLAs) are considered promising candidates for on-chip particle accelerators that can achieve high acceleration gradients. This study explores various combinations of dielectric materials and accelerated structures based on the inverse Cherenkov effect. The designs utilize conventional processing methods and laser parameters currently in use. We optimize the structural model to enhance the gradient of acceleration and the electron energy gain. To achieve higher acceleration gradients and energy gains, the selection of materials and structures should be based on the initial electron energy. Furthermore, we observe that the variation of the acceleration gradient of the material is different at different initial electron energies. These findings suggest that on-chip accelerators are feasible with the help of these structures and materials.

Structure and material study of dielectric laser accelerators based on the inverse Cherenkov effect

Particle acceleration driven by intense lasers has long been a frontier of research in the field of laser engineering physics due to its extremely high acceleration gradient. Recently, dielectric laser accelerators (DLAs) have become a new research hotspot due to their ability to achieve gigavolt-per-meter acceleration gradients on compact chip-level all-optical structures. In comparison to the currently widely used solid-state laser with a 1-μm wavelength, long-wave infrared (LWIR) lasers with a length of about 10 μm offer several unique advantages, including the ability to obtain a large electric charge of particle beams and lower energy divergence. These advantages have been validated in plasma-based laser accelerators as well as DLAs. Although the system is still in its early stages of development, the use of LWIR lasers for driving DLAs has special significance, including but not limited to easier processing of optical chips and larger acceleration channels. This review will provide a detailed introduction to this field from 2 aspects: DLAs and ultrashort and ultraintense LWIR lasers based on CO 2 laser amplifiers. 

Dielectric laser accelerators driven by ultra-short, ultra-intense long-wave infrared lasers

Relativistic beam loading, recoil-reduction, and residual-wake acceleration with a covariant retarded-potential integrator

On-chip stackable dielectric laser accelerator

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On-chip stackable dielectric laser accelerator

Structure and material study of dielectric laser accelerators based on the inverse Cherenkov effect