Rostislav A. Doganov
National University of Singapore
9 Papers
8 Citations
Rostislav A. Doganov is an academic researcher from National University of Singapore. The author has contributed to research in topics: Graphene & Phosphorene. The author has an hindex of 6, co-authored 9 publications. Previous affiliations of Rostislav A. Doganov include Heidelberg University.
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Papers
Electric field effect in ultrathin black phosphorus
TL;DR: In this paper, the authors demonstrate few-layer black phosphorus field effect devices on Si/SiO2 and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration.
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Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere
Rostislav A. Doganov,Eoin O'Farrell,Steven P. Koenig,Yuting Yeo,Angelo Ziletti,Alexandra Carvalho,David K. Campbell,David F. Coker,Kenji Watanabe,Takashi Taniguchi,Antonio H. Castro Neto,Barbaros Özyilmaz +11 more
TL;DR: It is reported that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.
526
Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms
Steven P. Koenig,Rostislav A. Doganov,Leandro Seixas,Alexandra Carvalho,Jun You Tan,Kenji Watanabe,Takashi Taniguchi,Nikolai Yakovlev,Antonio H. Castro Neto,Barbaros Özyilmaz +9 more
TL;DR: It is found that the addition of Cu adatoms can be used to controllably n-dope few layer black phosphorus, thereby lowering the threshold voltage for n-type conduction without degrading the transport properties.
229
Transport properties of ultrathin black phosphorus on hexagonal boron nitride
Rostislav A. Doganov,Steven P. Koenig,Yuting Yeo,Kenji Watanabe,Takashi Taniguchi,Barbaros Özyilmaz +5 more
TL;DR: In this article, a few-layer black phosphorus field effect transistors were characterized on hexagonal boron nitride, an atomically smooth and charge trap-free substrate.
114
Numerically-Exact Schrödinger Dynamics of Closed and Open Many-Boson Systems with the MCTDHB Package
Axel U. J. Lode,Kaspar Sakmann,Rostislav A. Doganov,Julian Grond,Ofir E. Alon,Alexej I. Streltsov,Lorenz S. Cederbaum +6 more
- 15 Oct 2013
TL;DR: It is assessed with a benchmark versus an analytically treatable model of trapped interacting bosons that the MCTDHB is capable of solving the TDSE for bosons numerically exactly, i.e., to any desired numerical precision.
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