As the performance requirements of insulated gate bipolar transistors (IGBTs) in various fields of power electronic systems are increasing, the IGBT power module package structure, aging mechanism analysis, and selection of health state characteristic parameters are of great significance to ensure the normal operation of power systems. At present, research on the aging failure of welded IGBT modules is relatively comprehensive and can be divided into chip aging failure and package aging failure according to their failure parts. However, there is some research on the relationship between aging failure and the characteristic quantity of power modules, but no definite system has been formed. Therefore, in this paper, the packaging structure of the solder-type IGBT modules and the aging mechanism caused by different aging reasons were summarized. Moreover, the health status monitoring of solder-type IGBT modules from the junction temperature, bonding line, solder layer, and package insulation aging health status monitoring and its quantitative assessment research progress was analyzed in detail. Also, the health state evaluation index system of the solder-type IGBT modules was completed on the basis of voltage, current, thermal, insulation parameters, and other characteristic quantities. Finally, based on the analysis of domestic and international research problems, the development trend and direction of the condition monitoring technology of solder-type IGBT modules is foreseen. The research on condition monitoring for welded IGBT module technology has a certain significance. 

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

Due to the increase in power loss, the internal junction temperature of the IGBT device increases. Long-term operation in a high junction temperature environment, IGBT device insulation packaging material silicone gel will undergo thermal aging, and its thermal stability and insulation characteristics will directly affect its service life after aging. In order to study the effects of thermal aging on the thermal stability and dielectric properties of silicone gels, this paper tested the physicochemical properties of silicone gel materials at different aging stages based on the accelerated thermal oxygen aging experiment of silicone gel materials, combined with FTIR and TGA. The experimental results showed that the main chain group of the silicone gel increased, the side chain group decreased after aging. The crosslinking reaction mainly occurred during the aging process, and the degree of crosslinking increased. The thermal stability decreased, and the insulation performance deteriorated. The experimental results of this paper lay an experimental foundation for the next step to study the thermal aging mechanism and modification of silicone gels.

Analysis of Thermal Aging Characteristics of Silicone Gel for High-Voltage IGBT Packaging

Partial Discharge in Silicone Gel on Power Module Substrates in High-Humidity Conditions

Due to the increase in power loss, the internal junction temperature of the IGBT device increases. Long-term operation in a high junction temperature environment, IGBT device insulation packaging material silicone gel will undergo thermal aging, and its thermal stability and insulation characteristics will directly affect its service life after aging. In order to study the effects of thermal aging on the thermal stability and dielectric properties of silicone gels, this paper tested the physicochemical properties of silicone gel materials at different aging stages based on the accelerated thermal oxygen aging experiment of silicone gel materials, combined with FTIR and TGA. The experimental results showed that the main chain group of the silicone gel increased, the side chain group decreased after aging. The crosslinking reaction mainly occurred during the aging process, and the degree of crosslinking increased. The thermal stability decreased, and the insulation performance deteriorated. The experimental results of this paper lay an experimental foundation for the next step to study the thermal aging mechanism and modification of silicone gels. 

This study presents a novel, integrated approach to investigating and characterizing the impact of humidity on Insulated-Gate Bipolar Transistors (IGBTs) within large-scale inverter systems. Combining meticulously designed experimental setups and advanced finite element simulations, we delve deep into the complex dynamics of moisture transfer within IGBT modules. Our research demonstrates a meticulously designed experimental setup within a controlled climate chamber, enabling a comprehensive characterization process of the humidity transfer into the IGBT module. The proposed method allows for a detailed study of the moisture distribution as well as the effect of the temperature on the moisture within an IGBT module. We leverage the advanced capabilities of commercial finite element software to complement our experimental findings. These simulations enable a deeper understanding of the moisture distribution's symmetries and provide invaluable insights into simplifying the complex simulations. By integrating these diverse methodologies, we develop a comprehensive approach that deciphers the spatial distribution of humidity within the module and its real-time responses to environmental conditions. This integrated approach holds an immense potential for analyzing optimal system performance and facilitating self-optimization of the inverter by predicting stress induced by humidity. 

Investigating Humidity Transfer in IGBT Modules: An Integrated Experimental and Simulation Approach

Insulated Gate Bipolar Transistors (IGBTs) are semiconductor devices used in power modules for inverters and in many other applications. The challenge however is that these devices do not last their estimated life span of about 20 years and experience different failure mechanisms. It is of interest to study the failure mechanisms to give a better understanding of how to improve reliability of these devices as well as model and accurately predict the lifetime of IGBTs. The IGBT circuitry is encapsulated in silicone gel and the presence of this silicone gel prevents visual inspection of the type of failure mechanism that was experienced by the IGBT. When using a scanning electron microscope to examine the failed module, the sample may need to be gold plated and will be placed in a vacuum. Any silicone gel remaining on the IGBT module under investigation will vaporise and coat parts of the electron microscope thus damaging the microscope. Hence there is need to be able to remove all the silicone gel from the IGBT module before proper investigation into the mechanism that caused failure can begin. The results of these experiments show a practical approach on how to remove silicone in the laboratory from IGBT modules without causing any further corrossive damage to the modules under investigation.

Experimental Investigation of IGBT Silicone Gel Removal

Examples are given of differing techniques of non-destructive imaging of semiconductor devices in order to detect faults which may affect their lifetime. Images are shown from optical microscopy and also X-ray systems to illustrate the visibility of faults under differing visualisation techniques. The techniques also include three dimensional visualisation. Issues with the silicone gel are described and separation of the silicon and aluminium cross sections.

Non-Destructive Imaging of Insulated Gate Bipolar Transistor Power Modules

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Experimental Investigation of IGBT Silicone Gel Removal

Non-Destructive Imaging of Insulated Gate Bipolar Transistor Power Modules