Rongsheng Chen
South China University of Technology
140 Papers
345 Citations
Rongsheng Chen is an academic researcher from South China University of Technology. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 15, co-authored 118 publications. Previous affiliations of Rongsheng Chen include Hong Kong University of Science and Technology.
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Papers
Solution-processed metal-oxide thin-film transistors: a review of recent developments.
Rongsheng Chen,Linfeng Lan +1 more
TL;DR: This review examines the various applications of solution-processed MO TFTs, from novel displays to sensing, memory devices, etc, and the main issues and challenges encountered in this field are discussed.
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Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering
TL;DR: In this article, the impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated and the correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.
Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors
TL;DR: In this paper, the bridged-grain technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors.
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Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions
TL;DR: In this article, a self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors with phosphorus-doped source/drain regions are developed.
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Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Source/Drain Regions Doped by Implanted Arsenic
TL;DR: In this article, a self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors with source/drain (S/D) regions doped by implanted arsenic are developed.
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