An excellent broad-spectrum (220-380 nm) UV photodetector, covering the UVA-UVC wavelength range, with an ultrahigh detectivity of ≈1015  cm Hz1/2 W-1 , is reported. It is based on a p-β Ga2 O3 /n-GaN heterojunction, in which p-β Ga2 O3 is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n-GaN. XRD shows the oxide layer is (-201) preferred oriented β-phase Ga2 O3 films. SIMS and XPS indicate that the residual N atoms as dopants remain in β Ga2 O3 . XPS also demonstrates that the Fermi level is 0.2 eV lower than the central level of the band gap, indicating that the dominant carriers are holes and the β Ga2 O3 is p-type conductive. Under a bias of -5 V, the photoresponsivity is 56 and 22 A W-1 for 255 and 360 nm, respectively. Correspondingly, the detectivities reach an ultrahigh value of 2.7 × 1015  cm Hz1/2 W-1 (255 nm) and 1.1 × 1015  cm Hz1/2 W-1 (360 nm). The high performance of this UV photodetector is attributed mainly to the continuous conduction band of the p-β Ga2 O3 /n-GaN heterojunction without a potential energy barrier, which is more helpful for photogenerated electron transport from the space charge region to the n-type GaN layer.

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-β Ga2 O3 /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method.

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

Ultrawide bandgap (UWBG) semiconductors, including Ga 

Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

CsPbCl3 has gained enormous attention since appearing and showed great potential in ultraviolet photodetectors over the past few years. Processing CsPbCl3¬¬ film through traditional solution methods hits a bottleneck due...

Heterointerface Engineering of Tetragonal CsPbCl3 based Ultraviolet Photodetector with Pentacene for Enhancing Photoelectric Performance

Beta-gallium oxide (β-Ga2O3)-based heterojunction photodetectors (HJPDs) based on p-n heterojunction have drawn a lot of attention since p-type doping of β-Ga2O3 is challenging to perform. Thus, choosing affordable and effective inorganic hole transport layers (HTLs) is a crucial first step in commercializing PDs. Copper aluminum oxide (p-CuAlO2) is a very likely candidate material for heterojunction with β-Ga2O3, because of its large hole mobility for use in solar-blind photodetectors and high-power electronics. In this study, we propose employing a p-CuAlO2 interlayer for built a β-Ga2O3-based SBUV HJPDs by regulating the oxygen flow rate (OFR) from 0 % to 30 % using the RF magnetron sputtering (RFMS) technique. Prior to building the p-CuAlO2/β-Ga2O3 HJPDs, the heterojunction band alignment was established and displayed staggered-gap band alignment with a valence band (ΔEV) offset of 1.1 eV and conduction band offset (ΔEC) of 0.65 eV with OFR of 30 %. In response to the UV-C (255 nm) wavelength, the good optoelectronic device properties such as low dark current of ∼10−12 A, large photo-to-dark current (Ilight/Idark) ratio (∼104), responsivity (R) (26.36 mA/W), detectivity (D*) (2.87 × 1010 cmHz1/2W−1), external quantum efficiency (EQE) (1.28 × 104 %), noise-equivalent power (NEP) (0.03 pWHz−1/2), linear dynamic range (LDR) (99.13 dB), and comparable rise (τr) and decay times (τd) of 0.25 s and 0.15 s respectively, were demonstrated for p-CuAlO2/β-Ga2O3 HJPDs with OFR of 30 % and also compared with pristine Pt/β-Ga2O3 Schottky barrier diode photodetector (SBDPD). The band offset at the p-CuAlO2/β-Ga2O3 interface is employed to explain the improvement of p-CuAlO2/β-Ga2O3 HJPDs. The incorporation of p-CuAlO2 into Pt/β-Ga2O3 SBDPD lead to an improved extraction efficiency of the generated free hole carriers under illumination. The Silvaco TCAD simulator was employed to get insight into the function of the p-CuAlO2 layer. The investigation focused on analyzing the variation profile of the recombination rate and electric field in Pt/β-Ga2O3 SBDPD and p-CuAlO2/β-Ga2O3 HJPD with OFR of 30 %. The outcomes demonstrate the stability and electron transfer impact of staggered gap p-CuAlO2/β-Ga2O3 HJPDs. Our findings show that the p-CuAlO2/β-Ga2O3 HJPDs have a great deal of potential as a candidate structure for the Ga2O3-based modern optoelectronic technologies. 

Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability

High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions

PIN-type self-powered deep ultraviolet (DUV) photodetectors (PDs) based on Ta doped n-Ga2O3/i-Ga2O3/p-GaN structures with different i-Ga2O3 layer thicknesses were prepared. In the structure, a Ta element in the doped Ga2O3 epitaxial layer should be substitutional doping, which can be confirmed by time-of-flight secondary ion mass spectrometry. With increasing thickness (0–90 nm) of the i-Ga2O3 layer, the crystal quality of the deposited epitaxial films is gradually improved, but the performance of corresponding PDs does not increase monotonically. The PD with an i-layer thickness of c.30 nm under zero bias shows the best response performance such as maximum photoresponsivity (8.67 A/W), good detectability (1.08 × 1014 Jones), and fast response/decay time (86/50 ms) under 222-nm-UV-light illumination. Such good performance should be attributed to the competition between the high photogenerated carriers and the low electric field, whereas the competition is caused by broadening of the depletion region. This research provides an improved and easy method for fabricating high-performance self-powered DUV PDs. 

Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN

Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substrates

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