A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Digit line comparison circuits

Systems and methods for ensuring data integrity in a data processing system are disclosed. The method may include monitoring when data for a specified device is available for error correction code generation. A new error correction code may be generated in hardware for the data, based on the indicated size of the data. Detected errors may be corrected in software, based on the generated new error correction code. A first indication of the specified device, a second indication of the data and a third indication of a size of the data may be received during the monitoring. The method may also include indicating when the generating of the new error correction code for a specified number of accesses for at least a portion of the data is complete, and enabling or disabling the error correction code generation. The enabling and/or the disabling may be accomplished via an enable signal.

Method and system for detecting and correcting errors while accessing memory devices in microprocessor systems

Error detection circuitry is provided on a programmable logic resource. Programmable logic resource configuration data is loaded into a cyclic redundancy check (CRC) module where a checksum calculation may be performed. In one embodiment, the checksum may be compared to an expected value, which is a precomputed checksum on data prior to being programmed into or while data is being programmed into a programmable logic resource. In another embodiment, the expected value may be included in the checksum calculation. An output indicating whether an error is detected may be generated depending on the relationship between the checksum and the expected value, or on the value of the checksum. This output may be sent to an output pin that is accessible by user logic.

Error detection on programmable logic resources

Systems and methods for detecting and correcting errors in programmable logic ICs are provided. In one embodiment, a scrubber periodically reads the memory cells in a programmable logic IC, detects and corrects any errors, and writes the corrected contents back into the memory cell. In another embodiment, regions of memory cells in a programmable logic IC each have associated error correcting circuitry which operates to continuously detect and correct errors as they occur. Error correcting circuitry can further be designed to reduce static hazards. It may be more desirable to design programmable logic IC routing architectures that reduce the number of memory cells needed to implement a given function. Error correcting circuitry can be provided for configuration memory or for an embedded memory block on a programmable logic IC.

Error correction for programmable logic integrated circuits

A computer system includes a processor coupled to a DRAM through a memory controller. The processor switches the DRAM to a low power refresh mode in which DRAM cells are refreshed at a sufficiently low rate that data retention errors may occur. Prior to switching the DRAM to the low power refresh mode, the processor identifies a region of an array of DRAM cells that contains essential data that needs to be protected from such data retention errors. The processor then reads data from the identified region, and either the DRAM or the memory controller generates error checking and correcting syndromes from the read data. The syndromes are stored in the DRAM, and the low power refresh mode is then entered. Upon exiting the low power refresh mode, the processor again reads the data from the identified region, and the read data is checked and corrected using the syndromes.

Memory system and method having selective ECC during low power refresh

A system for providing error check and correction (ECC) is provided. The system includes an ECC interface for storing ECC codes in a first memory system and storing data in a second memory system. The ECC interface corrects errors in the data received from the second memory system utilizing the ECC codes received from the first memory system. The ECC interface asserts at least one error flag upon detecting errors in the data, and a processor monitors the at least one error flag and corrects the data stored in the first memory system.

System and method for providing error check and correction in memory systems

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System and method for providing error check and correction in memory systems