Robert Rounds
North Carolina State University
6 Papers
Robert Rounds is an academic researcher from North Carolina State University. The author has contributed to research in topics: Thermal conductivity & Epitaxy. The author has an hindex of 4, co-authored 6 publications.
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Papers
Thermal conductivity of single-crystalline AlN
Robert Rounds,Biplab Sarkar,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +10 more
TL;DR: The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω method as discussed by the authors.
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The influence of point defects on the thermal conductivity of AlN crystals
Robert Rounds,Biplab Sarkar,Dorian Alden,Qiang Guo,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +12 more
TL;DR: In this article, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations was analyzed using the 3ω method in the temperature range of 30-325 K.
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Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
Robert Rounds,Biplab Sarkar,Tomasz Sochacki,Michal Bockowski,Masayuki Imanishi,Yusuke Mori,Ronny Kirste,Ramon Collazo,Zlatko Sitar +8 more
TL;DR: In this article, the thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295K GaN wafers.
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On contacts to III-nitride deep-UV emitters
Biplab Sarkar,Pramod Reddy,Andrew Klump,Robert Rounds,Mathew R. Breckenridge,Brian B. Haidet,Seiji Mita,Ronny Kirste,Ramon Collazo,Zlatko Sitar +9 more
- 01 Feb 2018
TL;DR: In this article, the contacts to III-nitride visible and UV-A based emitters have attracted research attention recently, and a way to reduce the contact resistance is to achieve a higher free carrier concentration in the epitaxial layer.
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Biplab Sarkar,Pramod Reddy,Andrew Klump,Felix Kaess,Robert Rounds,Ronny Kirste,Seiji Mita,Erhard Kohn,Ramon Collazo,Zlatko Sitar +9 more
TL;DR: In this paper, the Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures, and two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrophoresis with the semiconductors.