Robert M. Ireland
Johns Hopkins University
19 Papers
51 Citations
Robert M. Ireland is an academic researcher from Johns Hopkins University. The author has contributed to research in topics: Thermoelectric effect & Field-effect transistor. The author has an hindex of 8, co-authored 19 publications. Previous affiliations of Robert M. Ireland include University of California, Davis.
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Papers
Modification of the Poly(bisdodecylquaterthiophene) Structure for High and Predominantly Nonionic Conductivity with Matched Dopants
TL;DR: Values of nontransient Seebeck coefficient and conductivity agree with empirical modeling for materials with these levels of pure hole conductivity; the power factor compares favorably with prior p-type polymers made by the alternative process of immersion of polymer films into dopant solutions.
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Pyromellitic Diimide–Ethynylene-Based Homopolymer Film as an N-Channel Organic Field-Effect Transistor Semiconductor
Srinivas Kola,Joo Hyun Kim,Robert M. Ireland,Ming-Ling Yeh,Kelly Smith,Wenmin Guo,Howard E. Katz +6 more
TL;DR: In this paper, the synthesis and characterization of solution-processable pyromellitic diimide (PyDI)-acetylene-based conjugated homopolymers was reported.
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Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.
Josué F. Martínez Hardigree,Thomas J. Dawidczyk,Robert M. Ireland,Gary L. Johns,Byung Jun Jung,Mathias Nyman,Ronald Österbacka,Nina Markovic,Howard E. Katz +8 more
TL;DR: The first investigation of a self-assembled monolayer (SAM) dipole as an electrostatic barrier to reduce leakage currents in n-channel OFETs fabricated on a minimal, leaky ∼10 nm SiO2 dielectric on highly doped Si is reported.
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Conductivity and power factor enhancement of n-type semiconducting polymers using sodium silica gel dopant
TL;DR: In this article, the authors demonstrate the use of sodium silica gel (Na-SG) particles as a reducing agent for n-type conjugated polymers to improve the conductivity and thermoelectric properties.
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Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers
Liang Wu,Robert M. Ireland,Maryam Salehi,Bing Cheng,Nikesh Koirala,Seongshik Oh,Howard E. Katz,N. P. Armitage +7 more
TL;DR: In this paper, the authors use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator Bi2Se3 thin films into the intrinsic (bulk-insulating) regime.
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