A memory self-test system is provided comprising a self-test controller operable in self-test mode to generate a sequence of generated memory addresses for performing memory access operations associated with the memory test algorithm having an associated memory cell physical access pattern. A programmable re-mapper is operable to re-map the sequence of generated memory addresses derived from the self-test instruction to a sequence of re-mapped memory addresses. The programmable re-mapper performs this re-mapping in response to programmable mapping selection data. The re-mapping of the generated memory addresses to re-mapped memory addresses ensures that the memory cell accesses performed during execution of the memory self-test are consistent with the associated memory cell physical access pattern regardless of the particular implementation of the memory array.

Method and apparatus for memory self testing

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

A microcontroller with a mixed analog/digital architecture including multiple digital programmable blocks and multiple analog programmable blocks in a communication array having a programmable interconnect structure. The single chip design is implemented by integration of programmable digital and analog circuit blocks that are able to communicate with each other. Robust analog and digital blocks that are flash memory programmable can be utilized to realize complex design applications that otherwise would require multiple chips and/or separate applications. The programmable chip architecture includes a novel array having programmable digital blocks that can communicate with programmable analog blocks using a programmable interconnect structure. The programmable analog array contains a complement of Continuous Time (CT) blocks and a complement of Switched Capacitor (SC) blocks that can communicate together. The analog blocks consist of multi-function circuits programmable for one or more different analog functions, and fixed function circuits programmable for a fixed function with variable parameters. The digital blocks include standard multi-function circuits and enhanced circuits having functions not included in the standard digital circuits. The programmable array is programmed by flash memory and programming allows dynamic reconfiguration. That is, “on-the-fly” reconfiguration of the programmable blocks is allowed. The programmable analog array with both Continuous Time analog blocks and Switched Capacitor analog blocks are offered on a single chip along with programmable digital blocks. The programmable interconnect structure provides for communication of input/output data between all analog and digital blocks.

Programmable microcontroller architecture(mixed analog/digital)

The integrated memory has memory cells in a memory cell block having a plurality of column lines and a plurality of row lines. The row lines include regular row lines and redundant row lines. In the event of a read access to a current row line, a self-test unit checks the correctness of the memory cell contents read and, in the event of a defect, generates a defect signal for the current row line and, for each regular row line, detects the defects ascertained and compares them with an average defect for all of the regular row lines. When a predetermined repair condition is met during the comparison, the self-test unit outputs a row repair signal for the current row line. A self-repair unit interacting with the self-test unit replaces the current row line by a redundant row line in response to a row repair signal in the course of operation of the integrated memory. By still utilizing the existing redundancy after delivery, the failure probability of the memory module can be significantly reduced.

Integrated memory and method for testing and repairing the integrated memory

A mobile electronic device is disclosed. The mobile electronic device includes a housing, a processor supported by the housing, and a memory device coupled to the processor, the memory device including an adjustable self-refresh rate setting configured to determine the self-refresh rate of the memory device. The mobile electronic device also includes a temperature sensor supported by the housing, the temperature sensor is coupled to the processor and configured to measure a temperature. The mobile electronic device also includes computer program logic running on the processor, and the computer program logic is configured to predict a future temperature and change the adjustable self-refresh rate setting based on the predicted future temperature.

Predictive temperature compensation for memory devices systems and method

An integrated circuit includes a self-test device which is provided for executing a self-test of the integrated circuit and which has a control output. A program memory is connected to the self-test device for storing at least one test program supplied from outside the integrated circuit. The test program is run by the self-test device during execution of a self-test. The self-test device controls loading of a respective test program to be run into the program memory from outside the integrated circuit through the control output thereof.

Integrated circuit having a self-test device for carrying out a self-test of the integrated circuit

A memory configuration includes a central connection area The central connection area is surrounded annularly by cell arrays having memory cells The memory configuration has compact external dimensions and is suitable, in particular, for a side ratio of 2:1 All the peripheral circuits are preferably disposed in the central connection area As a result, the propagation time differences between the peripheral circuits and the various cell arrays are relatively small

Memory configuration with a central connection area

A refresh drive circuit for feeding refresh signals to a memory device has a refresh signal generator for generating a continuous sequence of refresh signals with a frequency which decreases as the temperature falls. The refresh drive circuit is connected to the memory device and as the temperature of the memory device falls, the frequency of refresh cycles decreases resulting in a decrease in current consumption.

Refresh drive circuit for a DRAM

An integrated circuit incorporating a self-test device and a method for producing a self-testing integrated circuit. The integrated circuit has a program memory with at least one external terminal for loading external test programs. The integrated circuit has a self-test device connected to the program memory, the self-test device executing program commands of a test program loaded into the program memory, the program commands succeeding one another in address terms, for carrying out a self-test of the circuit. The self-test device has an interrupt signal input, through which the self-test device interrupts the test program that is currently being executed by not executing the respective succeeding program command in address terms. Rather, it executes a program jump within the test program, the program jump being triggered by the interrupt signal.

Integrated circuit having a self-test device and method for producing the integrated circuit

The integrated memory has memory cells which are combined to form individually addressable standard units, and one or more redundant units for replacing one of the standard units on an address basis. The memory also has a self-test unit for performing a function test on the memory cells and for performing an analysis as to which of the standard units is to be replaced by a respective redundant unit. There is also a first memory unit for storing the address, determined by the self-test unit, of the standard unit which is to be replaced by the redundant unit, and a comparison unit connected to an address bus and to outputs of the first memory unit, for comparing an address present on the address bus with the address stored in the first memory unit. The comparison unit activates the redundant unit if a match is recognized. The first memory unit has at least one output which is connected to a corresponding output of the integrated circuit for outputting the respectively stored address.

Integrated memory having a self-repair function

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