An integrated circuit memory device is designed to perform high speed data write cycles. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. A transition of the Read/Write control line during a burst access is used to terminate the burst access and initialize the device for another burst access. Write cycle times are maximized to allow for increases in burst mode operating frequencies. Local logic gates near array sense amplifiers are used to control write data drivers to provide for maximum write times without crossing current during input/output line equilibration periods. By gating global write enable signals with global equilibrate signals locally at data sense amp locations, local write cycle control signals are provided which are valid for essentially the entire cycle time minus an I/O line equilibration period in burst access memory devices. For nonburst mode memory devices such as EDO and Fast Page Mode, the write function may begin immediately following the end of the equilibration cycle to provide a maximum write time without interfering with the address setup time of the next access cycle.

Distributed write data drivers for burst access memories

An integrated circuit memory device is described which can operate at high data speeds. The memory device can either store or retrieve data from the memory in a burst access operation. The burst operations latches a memory address from external address lines and internally generates additional memory addresses. An external input is used to terminate and change a burst operation. Circuitry is provided to monitor the external input during burst operations and provide an appropriate control signal.

Self-enabling pulse trapping circuit

An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs. Additionally, a DRAM is provided having both pipelined and burst Extended Data Out modes of operation and the ability to switch between them.

Method for switching between modes of operation

A method and apparatus for memory testing is described. A first pattern of data is written into the memory in a pseudo-random address sequence determined by an address generator. The first pattern is read from the memory and checked for any error. A second pattern that is the complement of the first pattern is written into the memory in a pseudo-random address sequence determined by the address generator. The second pattern is read from the memory and checked for any errors. A third pattern of data is written into the memory in the pseudo-random address sequence determined by the address generator. The third pattern of data has the effect of complementing respective check bits which are the same for the first pattern of data and the second pattern of data. The third pattern is read from memory and checked for any error.

Memory test method and apparatus

Very large dynamic RAM integrated circuits are rendered self-testing by using on-chip generation of data test patterns with very high fault coverage, and concurrent testing of storage cell subarrays to reduce overall testing time. A test generator, which may operate in combination with the refresh control and timing system of the RAM integrated circuit, supplies the initial data test pattern which is loaded into the storage arrays. The conventional sense amplifier array is modified, and coupled with a gate control system for shifting data in each column of each storage subarray to an adjacent column. Alternatively, a two-terminal bilateral storage cell may be used to effect the shifting function, which effectively converts the memory into a shift register. The use of complementary data test patterns will permit detection of symmetrical faults within storage arrays.

Self-testing dynamic RAM

Apparatus and a technique is disclosed for testing the access time of electronic storage arrays such as bistable storage cells fabricated in accordance with integrated circuit technology. A test pattern generator generates addresses on an "increment-complement" system and applies these addresses to a memory such as a PROM being tested. All combinations of the rows and columns of the PROM are exercised. Output data from the PROM is split into two separate buses which constitute a direct output bus and a delayed output bus. A first digital comparator compares the respective data signals for each output line on each of the buses in order to ensure that the "stabilized" output data corresponds exactly to the direct output data. A second digital comparator can be set to establish a standard for the minimum time period at which the output data from the tested PROM has become acceptably stabilized. Specialized clocking and controlled delay times are provided by a digital access control unit.

Apparatus and technique for testing IC memories

A testing circuit is disclosed for addressing and exercising a ROM-type memory and splitting the same memory output data into two paths. One path is used to temporarily hold the memory output data for a time-interval after which it is compared, in a digital comparator, with the same memory output data on the second path. When the data on both paths compare equally, then it is known that no instability has occurred during the time-interval. If a miscompare occurs, the comparator generates an error signal.

Testing system for reliable access times in ROM semiconductor memories

A test pattern generator is used for generating a series of address signals such as for exercising an integrated circuit memory. Master reference clock means are used to trigger a three stage counting circuit and also a circuit array of exclusive OR gates. The outputs of the stages of the counter provide individual inputs to each of the exclusive OR gates. The array of exclusive OR gates is arranged so that each exclusive OR gate has an output line which provides one bit of information for the address signals. The combination of the outputs of the OR gates forms a parallel bus which carries the address signals to be applied to the integrated circuit memory. The circuit generates a specialized address pattern in which the original address generated is complemented, then incremented on a series of increment-complement actions so that all combinations of the row and column drivers in the integrated circuit memory are exercised.

Test pattern address generator

A control circuit for generating first and second clocking pulses as outputs wherein there is a controlled time delay between the first and the second clocking pulses. The delay time, d i , between the first and second clocking pulses can be controlled as to the duration of the delay and also can be placed on an automatic sequence basis wherein the time delay d i period will automatically readjust to a series of smaller time delay periods.

Dual clocking time delay generation circuit

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Apparatus and technique for testing IC memories

Testing system for reliable access times in ROM semiconductor memories

Test pattern address generator

Dual clocking time delay generation circuit