Review on plug-in electric vehicle charging architectures integrated with distributed energy sources for sustainable mobility

In this work, a novel high performance 10 kV / 240 A silicon carbide (SiC) metal-oxide field-effect transistor (MOSFET) power module design is presented. The key features for this power module include reworkability, low parasitic design, low thermal resistance design, equal current sharing of high voltage power MOSFETs, and low profile and small form factor. The design tradeoffs to achieve these characteristics will be discussed. In addition, the static and dynamic electric characteristics will be presented and compared to an off-the-shelf silicon (Si) counterpart.

The next generation of high voltage (10 kV) silicon carbide power modules

This paper describes the development of a dedicated electromagnetic interference (EMI) characterization platform for the evaluation of wide bandgap-based converters in ungrounded architectures of the type likely to be employed on the future shipboard systems. This platform is designed to support the characterization of wide-bandgap-based converters operating at switching frequencies of hundreds of kilohertz; with power levels up to 100 kVA and with expected emissions up to 100 MHz. To illustrate the capabilities of this platform, the conducted emissions of a SiC-based half-bridge converter are evaluated (with a focus on common-mode (CM) behavior), and a parametric study is conducted which considers variations in the impedance between the half-bridge module base plate and a representative grounding structure. The focus of this work is not only the half-bridge converter which serves as the preliminary test subject, but also rather the custom metrological setup used for characterization, which is designed to discover sensitivities to resonant paths so that the design guidelines for peripheral structures and EMI mitigating components can be developed in the future studies. One major contribution of this work is the discovery that the symmetry of the parasitic capacitances within the converter’s multichip power module is an important factor which significantly influences the CM conducted emissions of the half-bridge structure, which serves as a building block for more complex converter topologies.

Methodology for Characterization of Common-Mode Conducted Electromagnetic Emissions in Wide-Bandgap Converters for Ungrounded Shipboard Applications

Simultaneously imposed challenges of high-voltage insulation, high <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{d}v/\mathrm{d}t$</tex> , high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gate-driver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Si-based ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper. 

/pdf/design-of-a-10-kv-sic-mosfet-based-high-density-high-26zb3990.pdf

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

This paper provides a comprehensive characterization of an example medium-voltage dc-based (MVDC) silicon carbide (SiC) MOSFET module of the type recently developed under Department of Defense (DoD) programs. As shown in this paper, these modules are capable of switching inductive loads very rapidly (<100 ns), with minimal overshoot and manageable parasitic-induced ringing. The transient analysis contained herein demonstrates a total per-cycle switching losses of 2.5 mJ at a bus voltage of 2 kV and a load current of 20 A. This figure is approximately two orders of magnitude lower than values recorded in the literature for commercially available silicon Insulated-Gate Bipolar Transistor modules with multikilovolt ratings at similar operating conditions (but which have lower blocking capability than the MVDC SiC module under study). These results corroborate the excellent switching performance of these MVDC SiC MOSFET modules, which has been only sparsely documented in the literature to date. In addition, this paper provides a comprehensive analysis of the static characteristics of these modules, including forward conduction, transfer characteristics, capacitance-voltage measurements, and quantization of parasitic impedances within the module housing. Technical challenges associated with making accurate and repeatable measurements with SiC modules of this scale are identified and explained, along with the details of the identified solutions. Finally, this paper includes a detailed description of the transient characterization test stand designed in support of this paper, which offers support for safely demonstrating the high-performance transient characteristics of MVDC SiC MOSFET modules at reasonable cost.

Comprehensive Characterization of 10-kV Silicon Carbide Half-Bridge Modules

Power conversion and solid state protection technologies are critical enablers to the accomplishment of the Navy's vision for shipboard Next Generation Integrated Power Systems but for most commercial offerings of this equipment the simultaneous achievements of high power density with electromagnetic and thermal compatibility and high reliability are prohibitive cost drivers. The increasing availability of wide bandgap power semiconductors provides the opportunity for the development of power electronic systems with a smaller footprint, higher efficiency and lower demands for external thermal management — enabling more widespread introduction of power electronic systems into the shipboard environment with lower system integration costs. However, the shipboard environment poses challenging competing requirements that cannot be ignored. The purpose of this paper is to highlight the future packaging challenges in three areas: modularity, increased module functionality and retrofit. These challenges are illustrated by three specific examples: medium voltage solid state transformer, medium voltage dc solid state circuit breaker and low voltage variable speed drive.

Power electronics packaging challenges for future warship applications

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Power electronics packaging challenges for future warship applications