The present invention includes a memory subsystem comprising at least two semiconductor devices (15, 16 , 17), including at least one memory device (15, 16 or 17), connected to a bus (18), where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices (15, 16 or 17), where the control information includes device-select information and the bus (18) has substantially fewer bus lines than the number of bits in a single address, and the bus (18) carries device-select information without the need for separated device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus (18) and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices (15, 16, 17). The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an Address Valid bus line carry address, data and control information for memory addresses up to 40 bits wide.

Integrated circuit I/O using a high performance bus interface

An apparatus for synchronously generating a first clock signal in a first circuitry and a second clock signal in a second circuitry of a data processing system is described. A clock generating circuitry generates a global clock signal. A transmission line transfers the global clock signal from its first end to its second end and includes a midpoint between the first end and the second end. A first clock signal generation circuit is coupled at a first point between the first end and the midpoint and a second point between the midpoint and the second end. The first and second points have the same line length to the midpoint. The first clock signal generation circuit generates the first clock signal at a first timing point which is halfway between the global clock signal with a first propagation delay from the first end to the first point and the signal with a second propagation delay from the first end to the second point. A second clock signal generation circuit is coupled at a third point between the first end and the midpoint and a fourth point between the midpoint and the second end. The third and fourth points have the same line length to the midpoint. The second clock signal generation circuit generates the second clock signal at a second timing point which is halfway between the global clock signal with a third propagation delay from the first end to the third point and the signal with a fourth propagation delay from the first end to the fourth point. The first timing point is the same as the second timing point such that the first signal is synchronized with the second signal.

Apparatus for synchronously generating clock signals in a data processing system

An interfacing circuitry for a semiconductor circuit of a computer system selects the semiconductor circuit for a device operation in accordance with data, addresses, and control information received from a multiline bus of the computer system in a form of packets. The computer system has a plurality of semiconductor circuits. The interfacing circuitry is coupled to the multiline bus. The multiline bus has a total number of lines less than a total number of bits in any single address. The interfacing circuitry resides inside the semiconductor circuit and includes a decoder for decoding the packets received to identify the data, addresses, and control information. A control logic circuitry is coupled to the decoder circuitry for controlling device operation of the first semiconductor circuit in accordance with the data, addresses, and control information received. A register circuitry is coupled to the decoder and the control logic circuitry for storing a first value corresponding to a first predetermined time period during which the interfacing circuitry must wait before transmitting reply information through the multiline bus in response to the data, addresses, and control information received. The register circuitry applies the first value to the control logic circuitry to cause the control logic circuitry to wait for the first predetermined time period before accessing the multiline bus for transmitting the reply information.

Memory circuitry having bus interface for receiving information in packets and access time registers

Improved circuitry for connecting the memory array to a data bus allows for high speed accessing of the memory array. Sense amplifier latches are coupled to each column of memory cells. The latched sense amplifiers are coupled to decoders which, in turn, are coupled to data amplifiers. The data amplifiers are coupled to a data bus. Data being read from or written to the memory cells is via the sense amplifier latches, the decoders, and data amplifiers.

Memory array with read/write methods

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

A MISFET dynamic random access memory chip having 4,096 single transistor, single capacitor storage cells yet packaged in a standard sixteen pin dual inline package is disclosed. Six bit row address and six bit column address data are sequentially multiplexed into row address latches and column address latches through six address pins by sequentially occurring row address and column address strobes. Sixty-four bits of information from an address row are read and transferred to a sixty-four bit column register. One bit of the column register is then selected by the column address decoder so that data is transferred from that bit to a data output latch. Data is transferred into a data input latch and then to the addressed bit of the storage matrix as well as to the addressed column register by a write signal. Upon completion of the row address strobe cycle, each cell in the address row is automatically refreshed by the data in the respective bit of the column register, including the bit which may have been modified by a write cycle. The state of the data output latch remains valid until a subsequent column address strobe is received. The write signal to the chip provides for a read only or a write only cycle, in addition to the read-modify-write cycle. In the absence of a chip select, the data output assumes an open circuit condition. The sense amp utilizes a dynamic differential amplifier to sense a voltage change of a precharged column bus. The entire system is substantially entirely dynamic in operation and accordingly has very low power consumption.

Dynamic random access memory misfet integrated circuit

Dynamischer misfet randomspeicher in integrierter schaltung

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Dynamic random access memory misfet integrated circuit

Dynamischer misfet randomspeicher in integrierter schaltung