A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

Replaceable upper chamber parts of plasma processing apparatus

A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.

Edge seal for lower electrode assembly

An inductively coupled plasma processing apparatus comprises a vacuum chamber, a vacuum source, and a substrate support on which a semiconductor substrate is supported. A ceramic showerhead forms an upper wall of the vacuum chamber. The ceramic showerhead includes a gas plenum in fluid communication with a plurality of showerhead gas outlets for supplying process gas to the interior of the vacuum chamber, and a central opening configured to receive a central gas injector. A central gas injector is disposed in the central opening of the ceramic showerhead. The central gas injector includes a plurality of gas injector outlets for supplying process gas to the interior of the vacuum chamber. An RF energy source energizes the process gas into a plasma state to process the semiconductor substrate. The flow rate of the process gas supplied by the central gas injector and the flow rate of the process gas supplied by the ceramic showerhead can be independently controlled.

Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus

This plasma processing apparatus brings a gas into the plasma state using high-frequency power, and performs, by the action of the plasma, plasma processing to a subject to be processed. The plasma processing apparatus is provided with: a chamber which can be depressurized; a placing table, which is provided in the chamber, and which has the subject placed thereon; an electrostatic chuck, which is provided on the placing table, and which electrostatically attracts the subject when a voltage is applied to a chuck electrode; a heater, which is divided into a circular center zone that is provided in the electrostatic chuck or in the vicinity thereof, two or more middle zones that are concentrically provided on the outer circumferential side of the center zone, and an edge zone that is concentrically provided on the outermost circumference; and a temperature control unit, which adjusts heater control temperatures by each divided zone.

Plasma processing apparatus and heater temperature control method

An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bore and cylindrical recess configured to receive an annular insert having a bayonet opening. The gas injector assembly includes a gas injector, an RF shield surrounding the gas injector, and a faceplate surrounding the RF shield, the faceplate including projections at the bottom thereof for engaging the bayonet opening in the annular insert. The window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.

Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber

An installation fixture adapted to mount an elastomer band in a mounting groove around a semiconductor substrate support used for supporting a semiconductor substrate in a plasma processing chamber is disclosed, which includes an annular ring having a vertically extending portion on an outer edge of the ring and adapted to receive the elastomer band, and a base plate configured to be attached to the annular ring, the base plate having a plurality of radially extending portions adapted to receive a plurality of mechanical fasteners at locations corresponding to mounting holes in the semiconductor substrate support.

Installation fixture for elastomer bands

A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.

Method of removing damaged epoxy from electrostatic chuck

A kit comprising an installation fixture, a plurality of mechanical fasteners and an embedding tool is provided which allows for an elastomer band to be disposed in a mounting groove around a semiconductor substrate support in a manner that relieves the internal stresses of the elastomer band, leading to an elastomer band with a longer operational lifetime. The installation fixture is secured to a substrate support with mechanical fasteners. An elastomer band is placed around an outer circumference of the installation fixture and rotated back and forth to relieve internal stresses of the elastomer band. The fixture is inverted and the elastomer band is slid vertically off the fixture and into the mounting groove. An embedding tool can be used to completely insert the elastomer band into the mounting groove.

Installation fixture for elastomer bands and methods of using the same

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Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber

Installation fixture for elastomer bands

Method of removing damaged epoxy from electrostatic chuck

Installation fixture for elastomer bands and methods of using the same