Rigui Deng
Wuhan University of Technology
7 Papers
1 Citations
Rigui Deng is an academic researcher from Wuhan University of Technology. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 6, co-authored 7 publications.
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Papers
Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance
Zheng Zheng,Xianli Su,Xianli Su,Rigui Deng,Constantinos C. Stoumpos,Hongyao Xie,Wei Liu,Yonggao Yan,Shiqiang Hao,Ctirad Uher,Chris Wolverton,Mercouri G. Kanatzidis,Xinfeng Tang +12 more
TL;DR: In this study, a series of Ge1-xMnxTe compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS) to find the best GeTe-based thermoelectric material.
354
High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe
Rigui Deng,Xianli Su,Xianli Su,Shiqiang Hao,Zheng Zheng,Min Zhang,Hongyao Xie,Wei Liu,Yonggao Yan,Chris Wolverton,Ctirad Uher,Mercouri G. Kanatzidis,Xinfeng Tang +12 more
TL;DR: In this article, a melt-spinning-based synthesis that forms in situ ZnTe nanoprecipitates to produce an extremely low lattice thermal conductivity of ∼ 0.35 W m−1 K−1 at 400 K, approaching the amorphous limit in the Bi2−xSbxTe3 system, while preserving the high power factor of Bi0.46Sb1.54Te3.
289
Realization of non-equilibrium process for high thermoelectric performance Sb-doped GeTe
Evariste Nshimyimana,Xianli Su,Hongyao Xie,Wei Liu,Rigui Deng,Tingting Luo,Yonggao Yan,Xinfeng Tang +7 more
TL;DR: In this article, the authors reported a thermoelectric figure of merit ZT of 1.56 at 700 K, realized in Sb-doped GeTe based TE materials via combined effect of suppression of intrinsic Ge vacancy and Sb doping.
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Enhanced Thermoelectric Performance of Bi0.46Sb1.54Te3 Nanostructured with CdTe
TL;DR: The pseudo ternary phase diagram for Cd-Bi/Sb-Te in the region near (Bi,Sb)2Te3 was systematically studied, which proves that Cd serves as an acceptor dopant contributing holes, whereas for samples doped with CdTe, the combined effects of the substitution of Sb/Bi with Cc leads to increase hole concentration.
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Modulation of carrier concentration and microstructure for high performance Bi x Sb 2-x Te 3 thermoelectrics prepared by rapid solidification
TL;DR: In this article, a series of BixSb2-xTe3 were prepared by vacuum melting, melt spinning combined with the plasma activated sintering (SPS) process.
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