The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin torque provides an efficient tool to manipulate - precisely, rapidly and at low energy cost - the magnetic state, which is in turn the central information medium of spintronic devices. By keeping the same magnetic stack, but by tuning a device's shape and bias conditions, the spin torque can be engineered to build a variety of advanced magnetic nanodevices. Here we show that by assembling these nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged. We focus in particular on recent concepts such as magnonics and spintronic neural networks.

Spin-torque building blocks

Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into three dimensions; a move triggered by the advance of unconventional synthesis methods and the discovery of new magnetic effects. In three-dimensional nanomagnets more complex magnetic configurations become possible, many with unprecedented properties. Here we review the creation of these structures and their implications for the emergence of new physics, the development of instrumentation and computational methods, and exploitation in numerous applications.

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Three-dimensional nanomagnetism

This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.

Spin-Torque and Spin-Hall Nano-Oscillators

Ising machines are hardware solvers that aim to find the absolute or approximate ground states of the Ising model. The Ising model is of fundamental computational interest because any problem in the complexity class NP can be formulated as an Ising problem with only polynomial overhead, and thus a scalable Ising machine that outperforms existing standard digital computers could have a huge impact for practical applications. We survey the status of various approaches to constructing Ising machines and explain their underlying operational principles. The types of Ising machines considered here include classical thermal annealers based on technologies such as spintronics, optics, memristors and digital hardware accelerators; dynamical systems solvers implemented with optics and electronics; and superconducting-circuit quantum annealers. We compare and contrast their performance using standard metrics such as the ground-state success probability and time-to-solution, give their scaling relations with problem size, and discuss their strengths and weaknesses. Minimizing the energy of the Ising model is a prototypical combinatorial optimization problem, ubiquitous in our increasingly automated world. This Review surveys Ising machines — special-purpose hardware solvers for this problem — and examines the various operating principles and compares their performance. 

/pdf/ising-machines-as-hardware-solvers-of-combinatorial-2ul6a5j8.pdf

Ising machines as hardware solvers of combinatorial optimization problems

An example magnetic recording head includes: a main magnetic pole; a laminated body; and a pair of electrodes. The laminated body includes a first magnetic layer having a coercivity lower than magnetic field applied by the main magnetic pole, a second magnetic layer having a coercivity lower than the magnetic field applied by the main magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The pair of electrodes is operable to pass a current through the laminated body.

Magnetic recording head and magnetic recording apparatus

It is made possible to provide a spin-torque oscillator that has a high Q value and a high output. A spin-torque oscillator includes: an oscillating field generating unit configured to generate an oscillating field; and a magnetoresistive element including a magnetoresistive effect film including a first magnetization pinned layer of which a magnetization direction is pinned, a first magnetization free layer of which a magnetization direction oscillates with the oscillating field, and a first spacer layer interposed between the first magnetization pinned layer and the first magnetization free layer.

Spin-torque oscillator, magnetic head including the spin-torque oscillator, and magnetic recording and reproducing apparatus

A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter connected to the magnetoresistance element and having its transmittance decreased or increased in substantially the frequency of the magnetic field to output a signal corresponding substantially to the peak of the thermal fluctuation strength of magnetization, and a detector connected to the frequency filter to detect the magnetic field based on the signal of the frequency filter.

Magnetic sensor, magnetic field sensing method, semagnetic recording head, and magnetic memory device

A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons, a magnetic material which is laminated on the nonmagnetic conductive material, generates magnetic resonance upon injection of the conduction electrons, and imparts magnetic dipole interaction to magnetization of a neighboring magnetic area by means of magnetic vibration stemming from the magnetic resonance, a first electrode electrically coupled with the first magnetic material, and a second electrode electrically coupled with the second magnetic material.

High-frequency oscillation element, magnetic information recording head, and magnetic storage device

A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.

Spin valve transistor

The spin-torque nano-oscillator in the presence of thermal fluctuation is described by the normal form of the Hopf bifurcation with an additive white noise. By the application of the reduction method, the amplitude-phase coupling factor, which has a significant effect on the power spectrum of the spin-torque nano-oscillator, is calculated from the Landau–Lifshitz–Gilbert–Slonczewski equation with the nonlinear Gilbert damping. The amplitude-phase coupling factor exhibits a large variation depending on an in-plane anisotropy under the practical external fields.

Amplitude-phase coupling in a spin-torque nano-oscillator

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