This article proposes a health indicator estimation method based on the digital-twin concept aiming for condition monitoring of power electronic converters. The method is noninvasive, without additional hardware circuits, and calibration requirements. An application for a buck dc–dc converter is demonstrated with theoretical analyses, practical considerations, and experimental verifications. The digital replica of an experimental prototype is established, which includes the power stage, sampling circuit, and close-loop controller. Particle swarm optimization algorithm is applied to estimate the unknown circuit parameters of interest based on the incoming data from both the digital twin and the physical prototype. Cluster-data of the estimated health indicators under different testing conditions of the buck converter is analyzed and used for observing the degradation trends of key components, such as capacitor and MOSFET. The outcomes of this article serve as a key step for achieving noninvasive, cost-effective, and robust condition monitoring for power electronic converters.

/pdf/a-digital-twin-based-estimation-method-for-health-indicators-2i5emsalvk.pdf

A Digital Twin Based Estimation Method for Health Indicators of DC–DC Converters

Despite the emerging multi-phase and multi-level converters, two-level insulated gate bipolar transistor-based power converters are still widely used in industrial applications in nowadays. Thus, its reliability is of significant importance for ensuring industrial safety. In this paper, a review of the possibilities to ensure the reliable operation of these power converters is presented. The possible approaches are categorized into two groups: condition monitoring and fault-tolerant control. The former approach performs the monitoring methods of power converters, which enables the identification of device degradation to be realized. Accordingly, the mechanisms, indicators, and measuring methods of degradation are demonstrated in this paper to assist the design of condition-based maintenance. In contrast, the latter approach is a post-fault one, where power converters remain the operation by activating the fault-tolerant units after faults are identified. For this approach, fault detection, fault isolation, and tolerant strategies are essential. Finally, the performance and cost-effectiveness of the two categories are discussed in this paper.

/pdf/ensuring-a-reliable-operation-of-two-level-igbt-based-power-3ibheadvd0.pdf

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

The online junction temperature monitoring of power devices is a viable technique to ensure the reliable operation of mission-critical power electronic converters. This article provides a potential approach for the junction temperature estimation of SiC MOSFET s based on the dynamic threshold voltage. The proposed method is independent of load current variation, which eliminates the complicated calibration procedure with load current. First, the physical mechanism and the temperature dependence of the dynamic threshold voltage are analyzed. An analytical model for the dynamic threshold voltage is built to investigate the effects of gate loop parameters on the temperature sensitivity and measurement accuracy. Then, the principle of the dynamic threshold voltage measurement circuit is introduced. Finally, the proposed dynamic threshold voltage measurement circuit is experimentally evaluated through the double-pulse tests. The experimental results show that the dynamic threshold voltage of SiC MOSFET has a good linear relationship with junction temperature. The temperature sensitivity of the dynamic threshold voltage of two SiC MOSFET s is approximately 5.2 mV/°C and 19.6 mV/°C, respectively.

Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction

Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures. Health management of converters based on accurate IGBT junction temperature is of great importance to reliable operation. However, the existing monitoring methods have some drawbacks, including low feasibility of online implementation, intrusiveness, and slow response. IGBT junction temperature has a strong influence on IGBT on -state voltage drop. A novel online IGBT junction temperature measurement method based on the on -state voltage drop is proposed in this article. This technique can monitor the on -state voltage drop of IGBT and extract IGBT junction temperature online. Besides, the influences of the measurement circuit temperature variations and IGBT load current variations are considered and compensated based on the off -state stage of the IGBT. Simulation and experimental results validate the feasibility of the proposed technique. The proposed method has advantages of fast response, low cost, and simple circuit structure for noninvasive online IGBT junction temperature monitoring.

A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop

This paper proposes a novel health-sensitive parameter, called the gate–emitter pre-threshold voltage V GE(pre-th), for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the V GE at a fixed time instant of the V GE transient before the threshold voltage occurs. To validate the proposed method, theoretical analysis and practical results for a 16-chip IGBT power module are presented in the paper. The results show a 500 mV average shift in the measured V GE(pre-th) for each IGBT chip failure.

/pdf/gate-emitter-pre-threshold-voltage-as-a-health-sensitive-3qtptfrtb0.pdf

Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules

Temperature sensitive electrical parameters (TSEPs) are promising for measurement of the insulated gate bipolar transistor (IGBT) junction temperature. Many TSEPs have been proposed in the literature and most require current sensors, and convoluted hardware and data processing, which are associated with increased complexity and cost. In this letter, a new TSEP is proposed called prethreshold TSEP, $V_{{\rm GE}({\rm pre}\text{-}{\rm th})}$ . $V_{{\rm GE}({\rm pre}\text{-}{\rm th})}$ requires only a voltage sensor and a counter. Besides less hardware requirement, $V_{{\rm GE}({\rm pre}\text{-}{\rm th})}$ does not suffer from self-heating—a problem that most TSEPs encounter. This letter presents the operation of $V_{{\rm GE}({\rm pre}\text{-}{\rm th})}$ with the help of simulation. Experimental tests on a 3.3 kV, 800 A IGBT were conducted to characterize $V_{{\rm GE}({\rm pre}\text{-}{\rm th})}$ . It is shown that the new TSEP proposed has a sensitivity of −2.2 mV/°C .

/pdf/prethreshold-voltage-as-a-low-component-count-temperature-2dn9bypz90.pdf

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

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Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules

Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating