Although fire is now rarely used in synthetic chemistry, it was not until Robert Bunsen invented the burner in 1855 that the energy from this heat source could be applied to a reaction vessel in a focused manner. The Bunsen burner was later superseded by the isomantle, oil bath, or hot plate as a source for applying heat to a chemical reaction. In the past few years, heating and driving chemical reactions by microwave energy has been an increasingly popular theme in the scientific community. This nonclassical heating technique is slowly moving from a laboratory curiosity to an established technique that is heavily used in both academia and industry. The efficiency of "microwave flash heating" in dramatically reducing reaction times (from days and hours to minutes and seconds) is just one of the many advantages. This Review highlights recent applications of controlled microwave heating in modern organic synthesis, and discusses some of the underlying phenomena and issues involved.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/anie.200400655

Controlled microwave heating in modern organic synthesis.

There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of th...

Rationally Designing High-Performance Bulk Thermoelectric Materials

and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures Vasilios Georgakilas,† Jason A. Perman,‡ Jiri Tucek,‡ and Radek Zboril*,‡ †Material Science Department, University of Patras, 26504 Rio Patras, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University in Olomouc, 17 listopadu 1192/12, 771 46 Olomouc, Czech Republic

Broad family of carbon nanoallotropes: classification, chemistry, and applications of fullerenes, carbon dots, nanotubes, graphene, nanodiamonds, and combined superstructures.

Hemicelluloses for fuel ethanol: A review.

Due to their unique 2D structure and outstanding intrinsic physical properties, such as extraordinarily high electrical conductivity and large surface area, graphene-based materials exhibit great potential for application in supercapacitors. In this review, the progress made so far for their applications in supercapacitors is reviewed, including electrochemical double-layer capacitors, pseudo-capacitors, and asymmetric supercapacitors. Compared with traditional electrode materials, graphene-based materials show some novel characteristics and mechanisms in the process of energy storage and release. Several key issues for improving the structure of graphene-based materials and for achieving better capacitor performance, along with the current outlook for the field, are also discussed.

/pdf/an-overview-of-the-applications-of-graphene-based-materials-1i94k79n4k.pdf

An overview of the applications of graphene-based materials in supercapacitors.

The presently disclosed and/or claimed inventive concept(s) relates generally to hexagonal osmium boride, OsB 2 , and methods of producing the same. In one non-limiting embodiment, hexagonal OsB 2 is produced by mechanochemical synthesis of osmium and boron in a high energy ball mill.

Mechanochemical synthesis of hexagonal OsB2

The stability of hexagonal ReB2 type OsB2 powder upon heating under reforming gas was investigated. Pure Os metal particles were detected by powder X-ray diffraction starting at 375°C and complete transformation of OsB2 to metallic Os was observed at 725°C. The mechanisms of precipitation of metallic Os is proposed and changes in the lattice parameters of OsB2 upon heating are analysed in terms of the presence of oxygen or water vapour in the heating chamber. Previous studies suggested that Os atoms possess (0) valence, while B atoms possess both (+3) and (−3) valences in the alternating boron/osmium sheet structure of hexagonal (P63/mmc, No. 194) OsB2; if controllable method for Os removal from the lattice could be found, the opportunity would arise to form two-dimensional (2D) layers consisting of pure B atoms.

Hexagonal OsB2 reduction upon heating in H2 containing environment

Strong catalytic activity of iron nanoparticles on the surfaces of reduced olivine

Point defect scattering via the formation of solid solutions to reduce the lattice thermal conductivity has been an effective method for increasing ZT in state-of-the-art thermoelectric materials such as Si-Ge, Bi2Te3-Sb2Te3 and PbTe-SnTe. However, increases in ZT are limited by a concurrent decrease in charge carrier mobility values. The search for effective methods for decoupling electronic and thermal transport led to the study of low dimensional thin film and wire structures, in particular because scattering rates for phonons and electrons can be better independently controlled. While promising results have been achieved on several material systems, integration of low dimensional structures into practical power generation devices that need to operate across large temperature differential is extremely challenging. We present achieving similar effects on the bulk scale via high pressure sintering of doped and undoped Si and Si-Ge nanoparticles. The nanoparticles are prepared via techniques that include high energy ball milling of the pure elements. The nanostructure of the materials is confirmed by powder X-ray diffraction, transmission electron microscopy, scanning electron microscopy, and dynamic light scattering. Thermal conductivity measurements on the densified pellets show a drastic 90% reduction in the lattice contribution at room temperature when compared to doped single crystal Si. Additionally, Hall effect measurements show a much more limited degradation in the carrier mobility. The combination of low thermal conductivity and high power factor in heavily doped n-type nanostructured bulk Si leads to an unprecedented increase in ZT at 1275 K by a factor of 3.5 over that of single crystalline samples. Experimental results on both n-type and p-type Si are discussed in terms of the impact of the size distribution of the nanoparticles, doping impurities and nanoparticle synthesis processes.

High Temperature Thermoelectric Properties of Nano-Bulk Silicon and Silicon Germanium

Thermal Control of Metathesis Reactions Producing GaN and InN.

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