Reinhold H. Dauskardt
Stanford University
429 Papers
3.5K Citations
Reinhold H. Dauskardt is an academic researcher from Stanford University. The author has contributed to research in topics: Fracture mechanics & Fracture toughness. The author has an hindex of 59, co-authored 409 publications. Previous affiliations of Reinhold H. Dauskardt include University of California, Berkeley & Center for Advanced Materials.
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Papers
Study of Crack Propagation at an Oxide/Polymer Interface Under Varying Loading Conditions
TL;DR: In this article, the authors investigate the effect of loading conditions and process parameters on the failure mode of a Silicon/SiO2/Silane/BCB interface system and find that the curing temperature of the coupling agent has a profound impact on the subcritical debond behavior of the structure.
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The Effect of Atomic-Scale Open-Volume on Flow and Fracture Processes in a Zr-Ti-Ni-Cu-Be Bulk Metallic Glass
TL;DR: In this article, the effects of atomic-scale open-volume regions in metallic glass structure on the flow and fracture behavior of a Zr-Ti-Ni-Cu-Be bulk metallic glass were examined.
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Effect of Composition and Microstructure on the Mechanical Stability of Perovskite Solar Cells
Nicholas Rolston,Adam D. Printz,Jared Tracy,Reinhold H. Dauskardt +3 more
- 10 Jun 2018
TL;DR: In this article, the intrinsic mechanical integrity of perovskite compositions and the role of various cation combinations, additives, and microstructure on perovskiite cohesion were explored.
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•Posted Content
Graphene as a p-type metal for ultimate miniaturization
Francesca Iacopi,Tim Gould,John Boeckl,Neeraj Mishra,Dayle Goding,Aiswarya Pradeepkumar,Benjamin V. Cunning,Barry J. Wood,Ryan E. Brock,Reinhold H. Dauskardt,Sima Dimitrijev +10 more
TL;DR: In this paper, the authors report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10−15$ $cm^{-2}$ and unprecedented sheet resistances of 20−25−Omega per square over microscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate.
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