Current trends in explosive detection techniques

Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrow-bandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases.

Antimonide-based compound semiconductors for electronic devices: A review

The slow-down in traditional silicon complementary metal-oxide–semiconductor (CMOS) scaling (Moore’s law) has created an opportunity for a disruptive innovation to bring the semiconductor industry into a postsilicon era. Due to their ultrathin body and ballistic transport, carbon nanotubes (CNTs) have the intrinsic transport and scaling properties to usher in this new era. The remaining challenges are largely materials-related and include obtaining purity levels suitable for logic technology, placement of CNTs at very tight (∼5 nm) pitch to allow for density scaling and source/drain contact scaling. This review examines the potential performance advantages of a CNT-based computing technology, outlines the remaining challenges, and describes the recent progress on these fronts. Although overcoming these issues will be challenging and will require a large, sustained effort from both industry and academia, the recent progress in the field is a cause for optimism that these materials can have an impact on fut...

Toward High-Performance Digital Logic Technology With Carbon Nanotubes

The sidewalls of vertically aligned, multiwalled carbon nanotubes were functionalized using azide photochemistry, and DNA oligonucleotides were synthesized in situ from the reactive group on each photoadduct to produce water-soluble DNA-coated nanotubes. The functional DNA sites on the nanotubes were visualized from gold nanoparticles modified with complementary DNA and using TEM. The sidewall functionalization enabled further DNA-directed modification of the nanotubes' surfaces with nanoparticles. The DNA-coated vertically aligned nanotubes offer the architecture for a highly loaded three-dimensional DNA chip.

Highly Efficient Binding of DNA on the Sidewalls and Tips of Carbon Nanotubes Using Photochemistry

Porphyrin functionalized graphene is used to electrochemically detect nitroaromatic explosives. It is found that synergistic effects from the specific good adsorptive properties of porphyrin and the large electroactive surface area and fast charge transfer of graphene contribute to the sensitive detection. The porphyrin/graphene sensor shows an ultratrace detection of as low as 1 ppb of 2,4-dinitrotoluene, 0.5 ppb of 2,4,6-trinitrotoluene, 1 ppb of 1,3,5-trinitrobenzene and 2 ppb of 1,3-dinitrobenzene respectively and good reproducibility within 5.1 % standard deviation for a series of 9 repetitive measurements. The porphyrin/graphene sensor provides a unique platform in the analysis of nitroaromatic explosives for various security and environmental applications.

Porphyrin Functionalized Graphene for Sensitive Electrochemical Detection of Ultratrace Explosives

Integrated explosive preconcentrator and electrochemical detection system for 2,4,6-trinitrotoluene (TNT) vapor

High-density selective placement methods for carbon nanotubes

The room temperature current-voltage characteristics of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs), grown by chemical beam epitaxy on GaAs substrates, are reported as a function of the InAs buffer layer thickness and different interface configurations. The peak-to-valley current ratio (PVCR) improved from 1 to 12 as the buffer thickness was increased from 0 to 500 nm and the density of dislocations caused by the lattice mismatch of ∼7% decreased. No significant improvement was seen for a buffer thickness beyond 500 nm. Dislocation-free RITDs, grown lattice-matched on InAs substrates, show PVCRs of approximately 16. The InAs/AlSb Interfaces in these structures can be either InSb-like or AlAs-like and the interface can have a very strong effect on the diode performance. Unlike the case in InAs/AlSb field effect transistor structures, an AlAs-like interface results in better PVCRs in the diodes. Details of the results of this study are presented.

Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates

The effective and reliable detection of explosive compounds in complex environments is an important problem in many environment and security-related applications. This paper develops an explosive detection approach based on multi-modal sensing and sensor data fusion. A least-squares feature extraction technique is designed to isolate explosive signatures in data collected using electrochemical and polymer nanojunction sensors. The information obtained from the two sensors is then efficiently combined using a Bayesian decision fusion scheme. Results are presented for the detection of the explosive compound TNT showing the merit of the proposed approach.

Least-squares based feature extraction and sensor fusion for explosive detection

Lithography has played a key role in the scaling of CMOS-based integrated circuits. To fabricate sub-70 nm features, new techniques based on electron projection and extreme ultraviolet radiation are being developed. These and other lithographic solutions are discussed. For the ultimate in scaling, an alternate approach would be to start with objects that are inherently nano-scale in size, and use chemical techniques to have these objects self-assemble into units that provide electronic functionality. Several classes of molecules, including carbon nanotubes, deoxyribonucleic acid (DNA) and custom-synthesized organic molecules, are potentially suitable for this approach. Some recent advances in their research will be reviewed.

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