18 Papers
34 Citations
Ravi Goel is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Flicker noise & BSIM. The author has an hindex of 4, co-authored 12 publications.
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Papers
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
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Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs
TL;DR: In this paper, an analytical model that accurately captures anomalous matching characteristics of drain current in a halo-implanted MOSFET across bias, geometry, and temperature is presented.
14
Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications
TL;DR: In this article, an improved physical equivalent circuit was derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network, which was implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer aided design device simulations and experimental data.
13
Improved Modeling of Bulk Charge Effect for BSIM-BULK Model
TL;DR: An improved model of bulk charge effect for both drain current and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model is presented.
12
BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design
Chetan Gupta,Ravi Goel,Harshit Agarwal,Chenming Hu,Yogesh Singh Chauhan +4 more
- 01 Apr 2019
TL;DR: The recent and upcoming enhancements of the industry standard BSIM-BULK model are presented and an analytical model for bulk charge effect, in both current and capacitance, is implemented to improve the model accuracy for transconductance and output conductance.
12