Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

BiFeO3 is perhaps the only material that is both magnetic and a strong ferroelectric at room temperature. As a result, it has had an impact on the field of multiferroics that is comparable to that of yttrium barium copper oxide (YBCO) on superconductors, with hundreds of publications devoted to it in the past few years. In this Review, we try to summarize both the basic physics and unresolved aspects of BiFeO3 (which are still being discovered with several new phase transitions reported in the past few months) and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.

Physics and Applications of Bismuth Ferrite

Multiferroic magnetoelectric composite systems such as ferromagnetic-ferroelectric heterostructures have recently attracted an ever-increasing interest and provoked a great number of research activities, driven by profound physics from coupling between ferroelectric and magnetic orders, as well as potential applications in novel multifunctional devices, such as sensors, transducers, memories, and spintronics. In this Review, we try to summarize what remarkable progress in multiferroic magnetoelectric composite systems has been achieved in most recent few years, with emphasis on thin films; and to describe unsolved issues and new device applications which can be controlled both electrically and magnetically.

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Graphene-based materials exhibit remarkable electronic, optical, and mechanical properties, which has resulted in both high scientific interest and huge potential for a variety of applications. Furthermore, the family of graphene-based materials is growing because of developments in preparation methods. Raman spectroscopy is a versatile tool to identify and characterize the chemical and physical properties of these materials, both at the laboratory and mass-production scale. This technique is so important that most of the papers published concerning these materials contain at least one Raman spectrum. Thus, here, we systematically review the developments in Raman spectroscopy of graphene-based materials from both fundamental research and practical (i.e., device applications) perspectives. We describe the essential Raman scattering processes of the entire first- and second-order modes in intrinsic graphene. Furthermore, the shear, layer-breathing, G and 2D modes of multilayer graphene with different stacking orders are discussed. Techniques to determine the number of graphene layers, to probe resonance Raman spectra of monolayer and multilayer graphenes and to obtain Raman images of graphene-based materials are also presented. The extensive capabilities of Raman spectroscopy for the investigation of the fundamental properties of graphene under external perturbations are described, which have also been extended to other graphene-based materials, such as graphene quantum dots, carbon dots, graphene oxide, nanoribbons, chemical vapor deposition-grown and SiC epitaxially grown graphene flakes, composites, and graphene-based van der Waals heterostructures. These fundamental properties have been used to probe the states, effects, and mechanisms of graphene materials present in the related heterostructures and devices. We hope that this review will be beneficial in all the aspects of graphene investigations, from basic research to material synthesis and device applications.

/pdf/raman-spectroscopy-of-graphene-based-materials-and-its-3g29xwkxmv.pdf

Raman spectroscopy of graphene-based materials and its applications in related devices.

A review on selective laser sintering/melting (SLS/SLM) of aluminium alloy powders: Processing, microstructure, and properties

Superconducting thin films of Nd1−xYxBa2Cu3O7−δ (x = 0053, 0106 and 0159) have been grown on single crystal SrTiO3 substrates by pulsed laser deposition The orientation of the films was investigated by x-ray diffraction The surface morphology of the films was examined by atomic force microscopy and scanning tunnelling microscopy Qualitative and quantitative elemental analyses of the films were carried out by using electron probe microanalysis Micro-Raman spectroscopy was used to study the oxygen sublattice vibrations of the films The effects of annealing were also investigated after patterning device structures in the films

Growth, microstructure, Raman spectroscopy and annealing effect of Nd1−xYxBa2Cu3O7−δ thin films by laser ablation

The In
 x
 Ga1−x
 N thin films with indium content of x = 14–18 at.% were successfully grown by using molecular beam epitaxy (MBE) at high growth temperatures from 650°C to 800°C. In situ reflection high-energy electron diffraction (RHEED) of the In
 x
 Ga1−x
 N films confirmed the Stranski–Krastanov growth mode. X-ray diffraction (XRD) of the films confirmed their highly crystalline nature having c-axis orientation with a small fraction of secondary InN phase admixture. High-resolution cross-sectional scanning electron microscopy images showed two-dimensional epilayers growth with thickness of about ∼260 nm. The high growth temperature of In
 x
 Ga1−x
 N epilayers is found to be favorable to facilitate more GaN phase than InN phase. All the fundamental electronic states of In, Ga, and N were identified by x-ray photoelectron spectroscopy (XPS) and the indium composition has been calculated from the obtained XPS spectra with CASAXPS software. The composition calculations from XRD, XPS and photoluminescence closely match each other. The biaxial strain has been calculated and found to be increasing with the In content. Growing In
 x
 Ga1−x
 N at high temperatures resulted in the reduction in stress/strain which affects the radiative electron–hole pair recombination. The In
 x
 Ga1−x
 N film with lesser strain showed a brighter and stronger green emission than films with the larger built-in strain. A weak S-shaped near band edge emission profile confirms the relatively homogeneous distribution of indium.

MBE Grown In x Ga 1−x N Thin Films with Bright Visible Emission Centered at 550 nm

We report on structural, magnetic, optical, and dielectric properties of rare earth (Er and Yb)-doped ZnO nanoparticles with Na-co-doping for charge compensation by sol-gel process. The effect of doping concentration on the structural and dielectric properties of ZnO has been studied under magnetic field and UV excitation. The magnetodielectric and photodielectric effects at room temperature of doped ZnO are discussed in the light of magnetic and optical properties of Er3+ and Yb3+ ions.

Influence of rare-earth substitution on the structural, magnetic, optical and dielectric properties of ZnO nanoparticles

Asymmetric superlattices (SLs) with ferromagnetic La0.7Sr0.3MnO3 (LSMO) and ferroelectric Ba0.7Sr0.3TiO3 (BST) as constitutive layers were fabricated on conducting LaNiO3 (LNO) coated (001) oriented MgO substrates using pulsed laser deposition (PLD). The crystallinity, ferroelectric and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300K, and ferroelectric behavior over a range of temperatures between 100K and 300K. The dielectric response as a function of frequency obeys normal behavior below 300 K, whereas it follows Maxwell-Wagner model at elevated temperatures. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SL indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.

Structural and Magneto-Electric Properties of Pulsed Laser Deposited Ferroelectric/Ferromagnetic Heterostructure

Ferroelectric phase transition in Pb(Cd1/2Mo1/2)O3 ceramics

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