A method and apparatus for supporting positioning measurements The methods include designating a reference cell, choosing a positioning signal, and, for inter-frequency measurements, determining which inter-frequency cell to measure and how to make such an inter-frequency positioning measurement

Method and apparatus for supporting positioning measurements

Apparatus and methods provide relatively low uncorrectable bit error rates, low write amplification, long life, fast and efficient retrieval, and efficient storage density such that a solid-state drive (SSD) can be implemented using relatively inexpensive MLC Flash for an enterprise storage application. Predefined gears correspond to different predefined ECC schemes. Based on an observed bit error rate, a gear from a set of predefined gears is selected for use for a particular region of memory. Each gear of the set of predefined gears includes a lower-latency ECC decode option and one or more higher-latency ECC decode options.

Systems and methods for adaptively selecting from among a plurality of error correction coding schemes in a flash drive for robustness and low latency

Techniques for a post-write read are presented. In an exemplary embodiment, host data is initially written into the non-volatile memory in binary form, such as a non-volatile binary cache. It is then subsequently written from the binary section into a multi-state non-volatile section of the memory. After being written in multi-state format, pages of data from a multi-state block can then be checked against there source pages in the binary section to verify the quality of the multi-state write. This process can be performed on the memory device itself, without transferring the pages out to the controller.

Post-write read in non-volatile memories using comparison of data as written in binary and multi-state formats

Apparatus and methods provide relatively low uncorrectable bit error rates, low write amplification, long life, fast and efficient retrieval, and efficient storage density such that a solid-state drive (SSD) can be reliably implemented using various types of memory cells, including relatively inexpensive multi-level cell flash. One embodiment intelligently coordinates remapping of bad blocks with error correction code control, which eliminates the tables used to avoid bad blocks.

Systems and methods for reclaiming memory for solid-state memory

A method for calibrating read levels in a flash memory device is provided. The method includes receiving read information from flash memory in response to a read command, assigning soft information to the received read information, determining an error signal based on the assigned soft information, determining a read level offset based on the error signal, and adjusting a read level in the flash memory by the determined read level offset.

Read level adjustment using soft information

Flash memory is written to by determining a measure of health for each of a plurality of locations in flash memory. At least one of the plurality of locations in flash memory is selected based at least in part on the determined measures of health and the selected location(s) in flash memory is/are written to.

Measure of health for writing to locations in flash

Data is stored from a host. A flash memory is divided into a plurality of memory groups, the memory groups each comprising a plurality of flash memory blocks. A first portion of one of the plurality of memory groups is allocated for storing parity data of an error-correcting code for the memory group. A second portion of the memory group is allocated for storing data from the host. A flash memory block in the memory group is erased prior to writing the data from the host, wherein the flash memory block contains valid data. The erased valid data is recovered using the error-correcting code.

Coding across data blocks to reduce write amplification in NAND flash

A value read back from storage and a set of bins are received. Each bin in the set of bins has a bin range. A bin corresponding to the read-back value is selected from the set of bins. The bin range of the selected bin is adjusted, based at least in part on the read-back value, so that the read-back value is more centered within the selected bin after adjustment.

Blind and decision directed multi-level channel estimation

A first decoder performs decoding on each data set in a first plurality of data sets using a first code; each data set in the first plurality is stored on a different chip. It is determined if the first decoding is successful; if not, a second decoder performs a second decoding on each data set in a second plurality of data sets using a second code; each data set in the second plurality includes at least some data, after the first decoding using the first code, from each data set in the first plurality. The first decoder performs a third decoding on each data set in the first plurality using the first code, where each data set in the first plurality includes at least some data, after the second decoding using the second code, from each data set in the second plurality.

Solid state device coding architecture for chipkill and endurance improvement

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Measure of health for writing to locations in flash

Coding across data blocks to reduce write amplification in NAND flash

Blind and decision directed multi-level channel estimation

Solid state device coding architecture for chipkill and endurance improvement