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Design Of Analog Cmos Integrated Circuits

MEMS-based oscillators are an emerging class of highly miniaturized, batch manufacturable timing devices that can rival the electrical performance of well-established quartz-based oscillators. In this review, a description is given of the key properties of a MEMS resonator that determine the overall performance of a MEMS oscillator. Piezoelectric, capacitive and active resonator transduction methods are compared and their impact on oscillator noise and power dissipation is explained. An overview is given of the performance of MEMS resonators and MEMS-based oscillators that have been demonstrated to date. Mechanisms that affect the frequency stability of the resonator, such as temperature-induced frequency drift, are explained and an overview is given of methods that have been demonstrated to improve the frequency stability. The aforementioned performance indicators of MEMS-based oscillators are benchmarked against established quartz and CMOS technologies.

https://iopscience.iop.org/article/10.1088/0960-1317/22/1/013001/pdf

A review of MEMS oscillators for frequency reference and timing applications

This paper combines background information about the IBM Journal of Research and Development with guidelines for the preparation of Journal manuscripts. The purpose is to acquaint authors with the Journal as a primary, professional publication and to present suggestions to ease the work of author and editor in preparing clear, concise, and useful manuscripts.

IBM journal of research and development: information for authors

(IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure

An overview of microelectromechanical systems (MEMS) resonators for frequency reference and timing applications is presented. The progress made in the past few decades in design, modeling, fabrication and packaging of MEMS resonators is summarized. In particular, the state-of-the-art technologies for improving the overall performance of MEMS resonators, such as quality factor ( $Q$ ), motional impedance, temperature sensitivity, and initial frequency uniformity, are reviewed in detail. The challenges and opportunities during the commercialization of MEMS resonators are also stated, and future development trends driven either by technology or market are outlined. This paper intends to provide an outlook for possible research directions of MEMS resonators in frequency reference and timing applications. With outstanding reliability, unique multi-frequency functionality on a single chip, and high accuracy, MEMS resonators show great potential for replacing the quartz crystal resonators which have been dominating the timing market since 1920s. [2020-0106]

MEMS Resonators for Frequency Reference and Timing Applications

This paper presents unreleased CMOS-integrated MEMS resonators fabricated at the transistor level of IBM's 32SOI technology and realized without the need for any post-processing or packaging. In this technology, resonant body transistors (RBTs) are driven capacitively and sensed piezoresistively using an n-channel field effect transistor (FET). Acoustic Bragg Reflectors (ABRs) are used to localize acoustic vibrations in the unreleased resonators completely buried under the CMOS metal stack and surrounded by low- $\kappa$ dielectric. FET sensing is analytically compared with alternative active and passive sensing mechanisms to benchmark CMOS-MEMS resonator performance with frequency scaling. Experimental results from the first generation hybrid CMOS-MEMS RBTs show RBTs operating above 11 GHz with $Q{\rm s}$ of 24–30 and footprints of 5 $\,\times\,$ 3 $\mu{\rm m}$ . Comparative behavior of devices with design variations is used to demonstrate the effect of ABRs on spurious mode suppression. In addition, the performance of the RBTs is compared with passive electrostatic resonators, which show no discernible peak. Finally, temperature stability of ${ due to complimentary materials in the CMOS stack is analytically and experimentally verified. $\hfill{[2012\hbox{-}0309]}$

/pdf/resonant-body-transistors-in-ibm-s-32-nm-soi-cmos-technology-23mavuid1s.pdf

Resonant Body Transistors in IBM's 32 nm SOI CMOS Technology

Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.

Acoustic bandgap structures for integration of mems resonators

This work presents the first implementation of phononic crystals (PnCs) in a standard CMOS process to realize high-Q RF MEMS resonators at GHz frequencies without the need for any post-processing or packaging. An unreleased acoustic resonant cavity is defined using a PnC comprising back-end of line (BEOL) materials such as routing metals and low-k intermetal dielectric. A CMOS-MEMS resonant body transistor (RBT) with electrostatic driving and piezoresistive sensing is implemented within this cavity. This results in a 10× enhancement in Q at resonance and improved suppression of spurious modes off-resonance as compared to first-generation CMOS-integrated devices. The first PnC-confined RBT is demonstrated in IBM's 32 nm SOI process at 2.8 GHz with Q of 252, spanning a footprint of 5 μm × 7 μm.

Phononic crystals for acoustic confinement in CMOS-MEMS resonators

In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO 2 is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ∼4x lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.

An unreleased mm-wave Resonant Body Transistor

This paper presents a review of our work in CMOS-MEMS resonators fabricated in Front-End-of-Line (FEOL) processing of standard CMOS technology with no need for post-processing or special packaging. Acoustic resonators composed of Si and SiO2 found in the CMOS stack are demonstrated, confined by Acoustic Bragg Reflectors and sensed using a standard transistor embedded inside the acoustic resonant cavity. The merits of active transistor sensing of MEMS resonators at high frequencies are discussed, leading to the principle of the Resonant Body Transistors (RBTs) described in this work. RBTs realized in IBM's 32nm SOI process are demonstrated with resonance frequency above 11 GHz and Q~30, spanning a footprint of less than 15 μm2. Finally, thermal stability of <;3 ppm/K is shown for these CMOS-integrated devices. The CMOS-MEMS resonators presented here offer building blocks for RF circuit design which can be integrated seamlessly with supporting circuits for on-chip clocking and signal processing.

Solid state RF MEMS resonators in standard CMOS

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