Effects of Diffusion on Double Injection in Insulators

The potential and carrier distributions of a p-n-p-n device in the ON state are measured by electrical and optical probing techniques. The measurements are compared with numerical calculations of the potential and carrier distributions and the current-voltage characteristics as a function of device temperature. The calculations are based upon an analysis of the p-n-p-n device at high current densities using an abrupt junction model and including the effects of carrier-carrier scattering, conductivity modulation, and the dependence of emitter efficiency upon current density. The conditions under which the p-n-p-n device may be approximated by a p-n-n+device are also considered. The range of applicability of the results includes all ON currents of practical interest in a p-n-p-n device.

The potential and carrier distributions of a p-n-p-n device in the ON state

The simulation of semiconductor devices is a powerful means for optimizing the performance of semiconduc tor circuits and devices. various classes of semi conductor models exist, but accurate simulations re quire exact ("total") computer models. The exact models allow the use of arbitrary initial conditions and internal distributions and describe the device accurately over wide ranges of operation.This article discusses the leading numerical formula tions used to generate exact semiconductor models and describes the simulation of an NP junction, a bipolar transistor, and a MOS field effect transistor using exact models.

Simulation of semiconductor devices

Observation of Double Injection in Long Silicon p-i-n Structures

IT is well known that a space charge region is usually present in semiconducting oxides at metal-semiconductor junctions due to equalizing of Fermi levels at the junction1. Uhlig2 has pointed out that this space charge layer may be a determining factor for growth rate and for growth law. Specifically, Uhlig proposes that the space charge layer limits the flow of electrons (and thus the flow of ions) from metal to oxide, so the variation of the space charge layer characteristics with film thickness determines the growth law. The purpose of this communication is to point out some basic errors in the treatment of the model so that further development of this approach, as well as comparison with new experimental results, can be fruitful.

Uhlig Model of Oxidation Kinetics

A unified approach to the solution of semiconductor boundary value problems is presented. The terminal voltage (including bulk drops) is derived by taking the total current as the independent variable. At semiconductor interfaces relationships between potential drops and carrier concentrations in the neutral regions are reviewed in terms of both the electrostatic and electrochemical potentials. The terminal voltage is expressed in terms of either the electrostatic or electrochemical potentials. Examples are presented to illustrate the techniques presented in this paper in terms of the familiar RP+NR and not so familiar RvNR diodes.

A unified treatment of semiconductor boundary value problems

The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified. The relation between voltage readings obtained with probes and the different potentials existing in the material is discussed.

A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices

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A unified treatment of semiconductor boundary value problems

A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices