Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Oxygen vacancy induced structure change and interface reaction in HfO 2 films on native SiO 2 /Si substrate

We investigated the excitation intensity ( Φ ) dependent photoluminescence (PL), at room temperature (RT), from GaN-based metal-insulator-semiconductor structures under gate bias (VG) from accumulation to deep depletion resulting in variations of the space charge region width. We found that depending on VG, different Φ -dependencies of the YL band energy position (blueshift or redshift), shape (band enlargement or narrowing) and intensity (signal saturation) can be obtained. In order to explain such an unusual YL behavior, we developed a phenomenological PL model, which is based on the solution of the three-dimensional Poisson's equation, current continuity equations and rate equations, and which takes into account the grain structure of GaN layers and the contribution of interface regions into recombination processes. Our model reproduced well the experimental Φ -dependencies of the YL band intensity. It also predicts that YL arises from the donor-acceptor pair (DAP) recombination in very limited areas (...

/pdf/mechanism-of-yellow-luminescence-in-gan-at-room-temperature-3u0ukpi8vc.pdf

Mechanism of yellow luminescence in GaN at room temperature

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600℃, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 × 10−7 A/cm2 were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.

Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures

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Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures