Journal of Scientific Instruments Editor: Dr H R Lang Vol 28 and Supplement No 1, 1951 Pp xvi + 388 + iii + 80 (London: Institute of Physics, 1951) Bound, £3 12s; unbound, £3

/pdf/a-review-of-scientific-instruments-50cfd4j98s.pdf

A Review of Scientific Instruments

Sensors and Actuators A: Physical

This paper presents the design and fabrication of batch-processed cantilever probes with electrical shielding for scanning microwave impedance microscopy. The diameter of the tip apex, which defines the electrical resolution, is less than 50 nm. The width of the stripline and the thicknesses of the insulation dielectrics are optimized for a small series resistance (< 5 W) and a small background capacitance (~ 1 pF), both critical for high sensitivity imaging on various samples. The coaxial shielding ensures that only the probe tip interacts with the sample. The structure of the cantilever is designed to be symmetric to balance the stresses and thermal expansions of different layers so that the cantilever remains straight under variable temperatures. Such shielded cantilever probes produced in the wafer scale will facilitate enormous applications on nanoscale dielectric and conductivity imaging.

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging

In this paper, we present the design and fabrication of piezoresistive Microwave Impedance Microscopy (MIM) cantilever probes integrated with low impedance, electrically-shielded sharp tips to enable simultaneous topographical and electrical scanning probe microscopy. The fabricated probes show a piezoresistive resolution of 2 nm in 1 Hz to 10 kHz bandwidth, which ensures high quality topographic sensing. The resistance of the center conductor is measured less than 5 Ω and the capacitance between the conductor and shield is 1.7 pF. These parameters are critical for high sensitivity MIM imaging. Piezoresistive topography and MIM images are simultaneously obtained with the fabricated probes at room temperature and cryogenic temperature. These new piezoresistive probes improve MIM capabilities and therefore broaden MIM application in scientific and engineering areas.

Piezoresistive cantilever probes for simultaneous nanoscale topography and conductivity imaging

Developments and Recent Progresses in Microwave Impedance Microscope

We present new scanning probes suitable for Microwave Impedance Microscopy measurements on any scanning platform using a piezoactuator. We microfabricated piezoresistive cantilevers integrated with low-impedance, electrically-shielded transmission lines to enable simultaneous topographical and electrical scanning probe microscopy. The probes provide topography feedback with nanometer vertical resolution for samples or setups where laser detection is not feasible or desirable. MIM is a scanning probe technique that utilizes the interaction of a GHz electrical signal with a sample and yields a conductivity map of the sample at the nanoscale. Our new design exhibits vertical displacement resolution of 3.5 nm in a measurement bandwidth from 1 Hz to 10 kHz. The capacitance between shield and inner conductors measured with an impedance analyzer is 9.5 pF and the trace resistance is 32 Ω. We have demonstrated sample location and topographic scanning capabilities using the self-sensing piezoresistor.

Low-impedance shielded tip piezoresistive probe enables portable Microwave Impedance Microscopy

New scanning probes suitable for microwave impedance microscopy (MIM) measurements on any scanning platform using a piezoactuator are presented. The authors microfabricated piezoresistive cantilevers integrated with low-impedance, electrically shielded transmission lines to enable simultaneous topographical and electrical scanning probe microscopy. The probes provide topography feedback with nanometre vertical resolution for samples or setups where laser detection is not feasible or desirable. MIM is a scanning probe technique that uses the interaction of a gigahertz electrical signal with a sample, and yields a conductivity map of the sample at the nanoscale. The proposed design exhibits vertical displacement resolution of 3.5 nm in a measurement bandwidth from 1 to 10 kHz. The capacitance between shield and inner conductors measured with an impedance analyser is 9.5 pF and the trace resistance is 32 . Sample location and topographic scanning capabilities using the self-sensing piezoresistor are demonstrated.

Low-impedance shielded tip piezoresistive probe enables portable microwave impedance microscopy

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Low-impedance shielded tip piezoresistive probe enables portable Microwave Impedance Microscopy

Low-impedance shielded tip piezoresistive probe enables portable microwave impedance microscopy