We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3 barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.

/pdf/oscillatory-tunnel-magnetoresistance-in-double-barrier-268tdvj6g7.pdf

Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Mainstream digital electronic technology based on semiconductor transistors keeps demonstrating remarkable progress. A reasonable question to ask, however, would be how long this progress will continue. Throughout the three decades of the exponential growth of this mainstream technology, this question has been the subject of much scientific and pseudo-scientific speculation.

Superconductor Devices for Ultrafast Computing

Magnon- and phonon-assisted tunneling in a high-magnetoresistance tunnel junction using Co75Fe25 ferromagnetic electrodes

Switching properties and dynamic domain structures in double barrier magnetic tunnel junctions

Tunneling magnetoresistance of double-barrier magnetic tunnel junctions in sequential and coherent regimes

Magneto-tunneling injection device (MAGTID)

Superconducting circuits based upon Rapid Single Flux Quantum (RSFQ) Logic are an interesting approach for future digital electronics with clock frequencies in the range of 100 GHz. Our intention is to increase the integration density of such circuits. Therefore we have successfully fabricated and tested an RSFQ-circuit based on a new kind of stacked three terminal device, henceforth called a "stacktron". A stacktron consists of two vertically arranged all-niobium tunnel junctions, each separately shunted by a thin film resistor, and an access to the intermediate niobium layer. An RSFQ frequency divider (T-flip-flop) including two stacktrons has been tested up to 20 GHz. As a shunt resistor we used Pd/Au, so that /spl beta//sub c/<1 and the IV-curve is nonhysteretic. The junctions showed a current density of approximately 250 A/cm/sup 2/. The I/sub c/R/sub n/-product was 100 /spl mu/V. These first steps toward a three dimensional (3D) RSFQ architecture will be discussed in the framework of highly integrated and complex RSFQ-circuits.

Experimental realization of a 3D integrated RSFQ T-flip-flop using stacktrons

We present the design of a double junction ring oscillator, along with initial rf measurements. The ring oscillator design includes the usage of two shunted, stacked junction devices ("Stacktrons") as active switching nodes in the ring. The rf detection circuitry was designed to accommodate both a detector junction for measuring Shapiro steps and a finline antenna for broadband rf. As a motivation for our study, the double junction ring oscillator allows the probe of the multiple flux quantum (MFQ) state, which is a distinct, transient dynamical state resulting from the synchronous switching of nodal junctions in the circuit. Such a state has several possible applications. We quantify the existence of the MFQ state in the ring circuit configuration with numerical simulations, including circuit margins and yield. Finally, we provide a detailed explanation of the coupling circuitry between the ring oscillator and rf detection circuitry.

A double junction ring oscillator based on shunted, stacked junctions

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Magneto-tunneling injection device (MAGTID)

Experimental realization of a 3D integrated RSFQ T-flip-flop using stacktrons

A double junction ring oscillator based on shunted, stacked junctions