A review of flexible perovskite oxide ferroelectric films and their application

We report the influence of La and Mn dopants on the current-voltage characteristics of BiFeO3/ZnO heterojunction. The increased current densities (J) and enhanced diodelike behavior are clearly observed in (Bi0.95La0.05)FeO3/ZnO and Bi(Fe0.95Mn0.05)O3/ZnO compared to BiFeO3/ZnO. The diodelike behavior is found to arise from the polarization switching of the ferroelectric layer and the resulting interfacial charge distribution. A ferroelectric-semiconductor (FS) model is proposed to understand the physics origins of the La and Mn dopants induced current density and diodelike behavior enhancement. Further studies into the conduction mechanisms reveal that the dominant conduction mechanisms in low electric fields vary with La and Mn dopants, while they remain the same in high electric fields.

Influence of La and Mn dopants on the current-voltage characteristics of BiFeO3/ZnO heterojunction

Flexible electronic devices have been extensively studied for their advantages of distinguished portability, conformal contact characteristics, and human‐friendly interfaces compared with conventional bulk Si technology. Flexible electronics can be attached to various surfaces like skin and internal organs for human–machine interaction, which has made significant advances in electronics, medicine, neuromorphic computing, etc. Owing to the innovation and maturation of the thin film preparation process, which have promoted the successful preparation of high‐quality flexible ferroelectric films. Herein, the preparation of flexible ferroelectric devices and the progress of their applications in recent years are reviewed. Prevailing methods for preparing flexible ferroelectric films including the van der Waals heteroepitaxy on flexible substrate, delamination of the ferroelectric films on rigid substrate by chemical etching techniques, and direct use of novel 2D ferroelectric materials etc. are summarized. The research progress of flexible ferroelectric devices applied to memories, sensors, photovoltaic devices, and energy harvesters are also be discussed in detail. Moreover, the potential applications of flexible ferroelectric devices in the field of neuromorphic computing are studied, a new trend which contributes to the further development of brain‐like chip systems. Finally, the challenges and prospects of flexible ferroelectric devices in the future advanced electronics are briefly proposed.

Flexible Ferroelectric Devices: Status and Applications

Tin titanate ($\mathrm{SnTi}{\mathrm{O}}_{3}$) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the $\mathrm{S}{\mathrm{n}}^{2+}$ to $\mathrm{S}{\mathrm{n}}^{4+}$. In the present paper, we show two things: first, perovskite phase $\mathrm{SnTi}{\mathrm{O}}_{3}$ can be prepared by atomic-layer deposition directly onto $p$-type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with $p$-type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite $\mathrm{SnTi}{\mathrm{O}}_{3}$. Our films showed well-saturated, square, and repeatable hysteresis loops of around $3\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{C}/\mathrm{c}{\mathrm{m}}^{2}$ remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in $\mathrm{Pt}/\mathrm{SnTi}{\mathrm{O}}_{3}/\mathrm{Si}/\mathrm{SnTi}{\mathrm{O}}_{3}/\mathrm{Pt}$ heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.

Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate

We report a quantitative investigation on the capacitance-voltage (C-V) modeling of metal-ferroelectric-semiconductor epitaxial heterostructures based on a theoretical model. Within the carrier concentration between 1017 and 1021 cm−3, calculated C-V curves were consistent with measurements exhibiting from a significant asymmetry to a typical butterfly shape resembling that of a metal-ferroelectric-metal capacitor. The behavior of the C-V curves can be understood by the width of the depletion region and the extent of the depolarization field. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V measurements with potentially important implications on their device applications.

Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt (PZT-ZnO) heterostructures were fabricated by using a sol-gel process. Capacitance-voltage measurements performed on a wide temperature range (20–450 K) have revealed the presence of a hysteresis that undergo a change of direction from clockwise at temperatures below 350 K to counter-clockwise at higher temperatures. In the first case, the hysteresis is produced by charge injection, similar to the case of classical metal-oxide-semiconductor capacitors. In the last case, the hysteresis is the fingerprint of polarization reversal, as reported for metal-ferroelectric-semiconductor (MFS) structures based on n-Si. The memory window at 450 K is about 6 V. This result suggests that PZT-ZnO MFS heterostructures can be used for memory devices working at elevated temperatures, in which the ZnO plays the role of the semiconductor.

Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures

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Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt–ZnO–Pb(Zr0.2Ti0.8)O3–Pt heterostructures