In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of conductive filaments through insulating materials, such as metal oxides and chalcogenide glasses. Understanding the mechanisms for filament formation and disruption in resistive switching materials is a critical step toward the development of reliable and controllable RRAM for future-generation storage. In particular, the capability to control the filament resistance and the reset current through the compliance current during filament formation may provide a key signature to clarify the switching mechanism. This paper provides a physically based explanation for the universal resistance switching in bipolar RRAM devices. A numerical model of filament growth based on thermally activated ion migration accounts for the resistance switching characteristics. The same physical picture is extended to numerically model the reset transition. The impact of migration parameters and experimental setup on the set/reset characteristics is discussed through numerical simulations.

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Resistive-switching memory (RRAM) based on transition metal oxides is a potential candidate for replacing Flash and dynamic random access memory in future generation nodes. Although very promising from the standpoints of scalability and technology, RRAM still has severe drawbacks in terms of understanding and modeling of the resistive-switching mechanism. This paper addresses the modeling of resistive switching in bipolar metal-oxide RRAMs. Reset and set processes are described in terms of voltage-driven ion migration within a conductive filament generated by electroforming. Ion migration is modeled by drift–diffusion equations with Arrhenius-activated diffusivity and mobility. The local temperature and field are derived from the self-consistent solution of carrier and heat conduction equations in a 3-D axis-symmetric geometry. The model accounts for set–reset characteristics, correctly describing the abrupt set and gradual reset transitions and allowing scaling projections for metal-oxide RRAM.

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.

Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

Resistive-switching random access memory (RRAM) based on the formation and the dissolution of a conductive filament (CF) through insulating materials, e.g., transition metal oxides, may find applications as novel memory and logic devices. Understanding the resistive-switching mechanism is essential for predicting and controlling the scaling and reliability performances of the RRAM. This paper addresses the set/reset characteristics of RRAM devices based on $\hbox{HfO}_{x}$ . The set process is analyzed as a function of the initial high-resistance state and of the current compliance. The reset process is studied as a function of the initial low-resistance state. Finally, the intermediate set states, obtained by set at variable compliance current, and reset states, obtained by reset at variable stopping voltage, are characterized with respect to their reset voltage, allowing for a microscopic interpretation of intermediate states in terms of different filament morphologies.

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

We report a dual oxide layer as the active memory element of a scalable nonvolatile cross-point memory technology. The resistance change memory element is formed by a conductive metal oxide adjacent to an oxide tunnel barrier. Varying the as-deposited tunnel barrier thickness allows for control of the nominal current density and is targeted to meet the cell requirements for an ultra high density cross-point architecture. Excellent scaling of program and erase currents with electrode area and a continuous transition between program and erase state indicate that a uniform rather than a filamentary switching mechanism controls the device current both in the high and the low resistive state. A prior forming step is not required. The observed resistance change is caused by the exchange of oxygen ions between the conductive metal oxide and the tunnel oxide. Ion motion at room temperature is enabled by an exponential increase of the ion mobility under high electric fields during program and erase operations. The resistive switching effect of the device is explained by a change in the tunneling current due to an increase or decrease in effective tunnel barrier height. The barrier height varies due to changes in charge within the barrier as a result of oxygen ions moving in to or out of the tunnel barrier.

Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

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Oxide dual-layer memory element for scalable non-volatile cross-point memory technology