Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications

Epitaxial growth of transition-metal silicides on silicon

https://iopscience.iop.org/article/10.7567/JJAP.56.05DA04/pdf

Thermoelectric silicides: A review

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adsu.202100095

Environmentally Friendly Thermoelectric Materials: High Performance from Inorganic Components with Low Toxicity and Abundance in the Earth

Electrical and optical properties of silicide single crystals and thin films

We investigated some structural and transport properties of semiconducting ReSi2−δ . In the literature this silicides is reported to crystallize in an orthorhombic structure and to be stoichiometric ReSi2. Our investigations clearly show that the stable composition is ReSi1.75 crystallizing in the space group P1. Transport measurements show thermally activated behavior at high temperatures with one (or two) energy gap Eg=0.16 (0.30 eV). We also report Hall‐effect measurements on this material: we found that RH is positive between 30 and 660 K and at room temperature the Hall number nH=1/eRH is equal to 3.7×1018 cm−3. The Hall mobility at room temperature is relatively high (μH=370 cm2/V s) for a single crystal.

Structural and electronic transport properties of ReSi2−δ single crystals

The electrical resistivity of monocrystalline TiSi2, TaSi2, MoSi2, and WSi2 has been measured from 4.2 to 1100 K. These disilicides are metallic, yet there is a remarkable difference in the temperature dependence of their intrinsic resistivities. TiSi2 and TaSi2 are found to exhibit a T5 dependence in the temperature range of 13<T<30 K and 15<T<28 K, respectively, while MoSi2 and WSi2 show a T3.8 dependence from 15 to 40 K. For TiSi2, along the three crystallographic directions 〈100〉, 〈010〉, and 〈001〉, the phonon contribution to the resistivity was found to be linear in temperature above 300 K. The same behavior was observed for TaSi2 along the 〈0001〉 axis, while a negative deviation from the linearity followed by a quasisaturation was observed with the current, parallel to the 〈1010〉 axis. The resistivity data of WSi2 and MoSi2 with the current parallel to 〈001〉 and 〈110〉 crystallographic directions showed a positive deviation from linearity. The data are fitted to several theoretical expressions at low...

Analysis of the electrical resistivity of Ti, Mo, Ta, and W monocrystalline disilicides

The phosphorus redistribution in a WSi2/polycrystalline‐silicon structure after furnace annealing between 600 and 1000 °C was studied. When P is initially introduced into the polycrystalline‐silicon, a secondary ion mass spectroscopy analysis shows a nearly equidistribution of the dopant within the sandwich. When the silicide layer is phosphorus implanted, it has been clearly shown that with the refractory metal the dopant forms a tungsten phosphide compound more stable than WSi2 up to a critical temperature Tc. The stability of the phosphide increases with the implanted dose. A complete characterization of the additional phase was obtained by thermal annealing of W‐Si‐P powders. Several other interesting features on the redistribution of the dopant in the polycrystalline‐silicon/silicide structure have been established and discussed.

Phosphorus redistribution in a WSi2/polycrystalline‐silicon gate structure during furnace annealing

The cobalt reactivity on monocrystalline silicon has been studied for annealing temperatures lower than 500 °C. The techniques used were thermomagnetism measurements and transmission electron microscopy. The results demonstate that the reaction starts during deposition. During annealing the three types of formation kinetics were shown to exist as a function of temperature (20–220 °C, 220–370 °C, 370–420 °C). At the latter temperature the cobalt is completely transformed into CoSi and Co2Si.

Magnetic and transmission electron microscopy studies of the formation of cobalt silicide thin films

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Papers

Structural and electronic transport properties of ReSi2−δ single crystals

Analysis of the electrical resistivity of Ti, Mo, Ta, and W monocrystalline disilicides

Phosphorus redistribution in a WSi2/polycrystalline‐silicon gate structure during furnace annealing

Magnetic and transmission electron microscopy studies of the formation of cobalt silicide thin films