R.K. Smith
AT&T
6 Papers
60 Citations
R.K. Smith is an academic researcher from AT&T. The author has contributed to research in topics: Nonlinear system & Partial differential equation. The author has an hindex of 5, co-authored 6 publications.
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Papers
Transient Simulation of Silicon Devices and Circuits
TL;DR: An overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures and a simple data structure for nonsymmetric matrices with symmetric nonzero structures is presented.
304
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs
TL;DR: An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed.
112
A new discretization scheme for the semiconductor current continuity equations
TL;DR: A hybrid finite-element method to discretize the continuity equation in semiconductor device simulation is given, finding that the method works in any dimension and for (d-dimensional) simplexes as well as for quadrilaterals, bricks, prisms, and so on, although the authors have no proof that it will not break down in particular cases.
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Algorithms for Semiconductor Device Simulation
Randolph E. Bank,W. Fichtner,D.J. Rose,R.K. Smith +3 more
- 01 Jan 1987
TL;DR: A brief survey of the problem is given, and those algorithms which have been found to be effective in its solution are described.
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