R. I. Gorbunov
Russian Academy of Sciences
17 Papers
123 Citations
R. I. Gorbunov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum efficiency & Light-emitting diode. The author has an hindex of 9, co-authored 17 publications.
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Papers
Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs
TL;DR: In this paper, the authors analyzed the injection loss in p-GaN/InGaN and InGaN-n-gaN quantum-well LEDs by studying the temperature and current dependences of external quantum efficiency in the temperature range 77-300 K and by measuring transient currents.
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Mechanism of the GaN LED efficiency falloff with increasing current
N. I. Bochkareva,Vladislav Voronenkov,R. I. Gorbunov,Andrey Zubrilov,Y. S. Lelikov,F. E. Latyshev,Y. T. Rebane,Alexander Tsyuk,Y. G. Shreter +8 more
TL;DR: In this paper, the quantum efficiency of GaN LED structures has been studied at various temperatures and biases, and it was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer.
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Two modes of HVPE growth of GaN and related macrodefects
Vladislav Voronenkov,N. I. Bochkareva,R. I. Gorbunov,Philipp Latyshev,Yuri Lelikov,Y. T. Rebane,A. I. Tsyuk,Andrey Zubrilov,U. W. Popp,M. Strafela,Horst P. Strunk,Y. G. Shreter +11 more
TL;DR: In this paper, two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode: high temperature mode had smooth surface and high density of V-defects (pits), however, such films were crack-free.
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Nonuniformity of carrier injection and the degradation of blue LEDs
TL;DR: In this paper, the distribution of electroluminescence (EL) intensity over the area and in the course of time before and after the optical degradation of blue InGaN/GaN LEDs is studied.
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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
N. I. Bochkareva,Vladislav Voronenkov,R. I. Gorbunov,Andrey Zubrilov,Philippe Latyshev,Yu. S. Lelikov,Yu. T. Rebane,A. I. Tsyuk,Yu. G. Shreter +8 more
TL;DR: The mechanism of the internal quantum efficiency droop in InGaN/GaN structures with multiple quantum wells at current densities of up to 40 A cm−2 in high-power light-emitting diodes is analyzed in this article.
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