R. H. Mathews
Massachusetts Institute of Technology
6 Papers
38 Citations
R. H. Mathews is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Resonant-tunneling diode & Logic gate. The author has an hindex of 5, co-authored 6 publications.
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Papers
A new RTD-FET logic family
R. H. Mathews,J.P. Sage,T.C.L.G. Sollner,S.D. Calawa,Chang-Lee Chen,L.J. Mahoney,P.A. Maki,K.M. Molvar +7 more
- 01 Apr 1999
TL;DR: In this article, the authors describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD), which can achieve higher performance in terms of speed and power in many signal processing applications.
259
New self-aligned planar resonant-tunneling diodes for monolithic circuits
C.L. Chen,R. H. Mathews,L.J. Mahoney,P.A. Maki,K.M. Molvar,J.P. Sage,G.L. Fitch,T.C.L.G. Sollner +7 more
TL;DR: In this article, a planar RTD with a new planar configuration has been fabricated with a self-aligned process that is compatible with that of silicon integrated-circuits technology, where the size of the RTD is determined by a shallow boron implant, and individual RTDs are isolated by a deep proton implant.
19
Printed dipole millimeter wave antenna for imaging array applications
TL;DR: In this article, a planar antenna array at 140 GHz using twin-dipole elements was developed using a hybrid approach with beam lead Schottky GaAs diodes mounted on quartz substrates.
15
Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique
C.L. Chen,L.J. Mahoney,S.D. Calawa,R. H. Mathews,K.M. Molvar,J.P. Sage,P.A. Maki,T.C.L.G. Sollner +7 more
TL;DR: In this paper, a novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated.
6
Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration
C. L. Chen,L.J. Mahoney,S.D. Calawa,K.M. Molvar,P.A. Maki,R. H. Mathews,J.P. Sage,T.C.L.G. Sollner +7 more
TL;DR: In this paper, a planar technology was used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits, and the cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas was 7 GHz.